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Veeraraghavan S Basker, Huiming Bu, Kangguo Cheng, Balasubramanian S Haran, Nicolas Loubet, Shom Ponoth, Stefan Schmitz, Theodorus E Standaert, Tenko Yamashita: Cut-very-last dual-epi flow. International Business Machines Corporation, Harrington & Smith, October 29, 2013: US08569152 (20 worldwide citation)

A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered por ...


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Veeraraghavan S Basker, Huiming Bu, Kangguo Cheng, Balasubramanian S Haran, Nicolas Loubet, Shom Ponoth, Stefan Schmitz, Theodorus E Standaert, Tenko Yamashita: Cut-very-last dual-EPI flow. International Business Machines Corporation, Harrington & Smith, November 26, 2013: US08592290 (6 worldwide citation)

A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered por ...


3
CUT-VERY-LAST DUAL-EPI FLOW. December 5, 2013: US20130319613-A1

A method for making dual-epi FinFETs is described. The method includes adding a first epitaxial material to an array of fins. The method also includes covering at least a first portion of the array of fins using a first masking material and removing the first epitaxial material from an uncovered por ...



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