1
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, October 8, 2002: US06462722 (153 worldwide citation)

An organic EL display device driven by thin-film transistors is disclosed, wherein for suppressing the deterioration with time of thin-film transistors, at least one of the thin-film transistors, or a second thin-film transistor is formed of a p-channel type thin-film transistor. The p-channel type ...


2
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, February 20, 2007: US07180483 (78 worldwide citation)

An organic EL display device driven by thin-film transistors is disclosed, wherein for suppressing the deterioration with time of thin-film transistors, at least one of the thin-film transistors, or a second thin-film transistor is formed of a p-channel type thin-film transistor. The p-channel type ...


3
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, May 29, 2012: US08188647 (18 worldwide citation)

An electroluminescent device including a substrate, a transistor disposed above the substrate, the transistor including a gate electrode, a silicon film opposing the gate electrode, and a gate insulating film between the gate electrode and the silicon film. The electroluminescent device including a ...


4
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, January 29, 2013: US08362489 (12 worldwide citation)

A method for producing an organic EL display device is disclosed. The display device comprises a substrate, a transistor disposed on the substrate, a flattened inter-layer insulation film covering the transistor, a pixel electrode, and an organic EL layer.


5
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, December 18, 2003: US20030231273-A1

A method for producing an organic EL display device is disclosed. The display device comprises a substrate, a transistor disposed on the substrate, a flattened inter-layer insulation film covering the transistor, a pixel electrode, and an organic EL layer.


6
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, December 26, 2002: US20020196206-A1

An organic EL display device driven by thin-film transistors is disclosed, wherein for suppressing the deterioration with time of thin-film transistors, at least one of the thin-film transistors, or a second thin-film transistor is formed of a p-channel type thin-film transistor. The p-channel type ...


7
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, July 2, 2009: US20090167148-A1

An electroluminescent device including a substrate, a transistor disposed above the substrate, the transistor including a gate electrode, a silicon film opposing the gate electrode, and a gate insulating film between the gate electrode and the silicon film. The electroluminescent device including a ...


8
Mutsumi Kimura, Tomoyuki Itoh: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson Corporation, Oliff & Berridge, March 19, 2009: US20090072758-A1

A method for producing an organic EL display device is disclosed. The display device comprises a substrate, a transistor disposed on the substrate, a flattened inter-layer insulation film covering the transistor, a pixel electrode, and an organic EL layer.


9
Kimura Mutsumi, Itoh Tomoyuki: Current-driven light-emitting display apparatus and method of producing the same. Seiko Epson, zhang zhicheng, June 8, 2005: CN03142475

An organic EL device driven by thin-film transistors is disclosed, wherein for suppressing the deterioration with time of thin-film transistors, at least one of the thin-film transistors, or a second thin-film transistor is formed of a p-channel type thin-film transistor. The p-channel type thin-fil ...