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Ryotaro Azuma, Kazuhiko Shimakawa: Cross-point variable resistance nonvolatile memory device and reading method for cross-point variable resistance nonvolatile memory device. Panasonic Corporation, Wenderoth Lind & Ponack L, September 30, 2014: US08848426 (6 worldwide citation)

A cross-point variable resistance nonvolatile memory device comprises: a memory cell array; a column decoder and pre-charge circuit which pre-charges a selected word line to a first voltage in a period P1 among the period P1, a period P2, and a period S that are included in this order in a read oper ...


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CROSS-POINT VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE AND READING METHOD FOR CROSS-POINT VARIABLE RESISTANCE NONVOLATILE MEMORY DEVICE. Panasonic Corporation, April 17, 2014: US20140104925-A1

A cross-point variable resistance nonvolatile memory device comprises: a memory cell array; a column decoder and pre-charge circuit which pre-charges a selected word line to a first voltage in a period P1 among the period P1, a period P2, and a period S that are included in this order in a read oper ...