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Calvin T Gabriel, Christopher F Lyons, Marina V Plat, Ramkumar Subramanian: Contact etch resistant spacers. Renner Otto Boisselle & Sklar, June 9, 2005: US20050121738-A1

An apparatus and a method of fabricating a semiconductor device including the steps of forming a gate dielectric layer on a semiconductor substrate; forming a gate electrode over the gate dielectric layer wherein the gate electrode defines a channel interposed between source/drain regions formed wit ...


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Gabriel Calvin T, Lyons Christopher F, Plat Marina V, Subramanian Ramkumar: Contact etch resistant spacers. Advanced Micro Devcies, Gabriel Calvin T, Lyons Christopher F, Plat Marina V, Subramanian Ramkumar, sDRAKE Paul S, July 7, 2005: WO/2005/062372

An apparatus and a method of fabricating a semiconductor device (10) including the steps of forming a gate dielectric layer (20) on a semiconductor substrate (12); forming a gate electrode (18) over the gate dielectric layer (20) wherein the gate electrode (20) defines a channel (22) interposed betw ...


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