1
Shigeru Kuroda, Takashi Mimura, Seishi Notomi: Compound semiconductor device having nonalloyed ohmic contacts. Fujitsu, Staas & Halsey, October 2, 1990: US04961194 (20 worldwide citation)

An ohmic contact layer is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure and source/drain electrodes in a high electron mobility transistor. The ohmic contact layer comprises In.sub.x Ga.sub.1-x As or Ge. The ohmic contact layer has a function of considerably reduci ...


2
Kuroda Shigeru, Mimura Takashi, Notomi Seishi: Compound semiconductor device having nonalloyed ohmic contacts.. Fujitsu, September 21, 1988: EP0283278-A2 (8 worldwide citation)

An ohmic contact layer (15) is provided between an n-GaAs/n-AlGaAs/undoped GaAs double-heterojunction structure (14, 13, 12) and source/drain electrodes (19S, 19D) in a high electron mobility transistor. The ohmic contact layer (15) is made of InxGa1-xAs or Ge. The ohmic contact layer (15) has a fun ...