1
Umeda Kenichi, Hirai Hiroyuki, Tanaka Atsushi, Koda Katsuhiro, Azuma Kohei, Sunakawa Hiroshi: Oriented inorganic crystalline film, process for producing the same and semiconductor device. Fujifilm, July 30, 2009: JP2009-167087 (144 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for forming an oriented inorganic crystalline film such as a composite oxide on a substrate not having orientation.SOLUTION: A non-monocrystalline film 12 containing inorganic crystalline particles 20 is formed on an amorphous substrate 11 such as a glass su ...


2
Hwang Wei, Lu Nicky C: Vertical transistor capacitor memory cell structure and fabrication method therefor.. Ibm, January 25, 1989: EP0300157-A2 (121 worldwide citation)

A semiconductor memory cell structure incorporating a vertical access transistor over a trench storage capacitor including a semiconductor wafer having a semiconductor substrate (16) and an epitaxial layer (36) disposed thereon. A relatively deep polysilicon filled trench (26) is disposed in the epi ...


3
Koki Yano, Hirokazu Kawashima, Kazuyoshi Inoue, Shigekazu Tomai, Masashi Kasami: Field effect transistor using oxide semicondutor and method for manufacturing the same. Idemitsu Kosan, Millen White Zelano & Branigan P C, February 26, 2013: US08384077 (119 worldwide citation)

A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semi ...


4
Yasuyuki Naito, Motoo Hayashi: Capacitor and manufacturing method thereof. Murata Manufacturing, Ostrolenk Faber Gerb & Soffen, August 4, 1998: US05790368 (89 worldwide citation)

A capacitor comprising: a porous sintered body 2 consisting mainly of titanium; a dielectric film 3 which is formed on the surface of the sintered body and which consists mainly of a perovskite type composite oxide having a general formula of ATiO.sub.3 ; a conductor or semiconductor which is formed ...


5
Masaaki Takimoto, Takashi Saida, Masataka Murata: Photosensitive materials having improved antistatic property. Fuji Photo Film, Sughrue Mion Zinn Macpeak and Seas, January 22, 1985: US04495276 (72 worldwide citation)

A silver halide photosensitive material having an improved antistatic property is disclosed, comprising a base support having thereon an electrically conductive layer comprised of fine particles of a crystalline metal oxide selected from the group consisting of ZnO, TiO.sub.2, ZrO.sub.2, SnO.sub.2, ...


6
Hideo Kawaguchi, Tsutomu Okita, Hiroyuki Tamaki: Antistatic plastic films. Fuji Photo Film, Sughrue Mion Zinn Macpeak and Seas, February 18, 1986: US04571361 (67 worldwide citation)

An antistatic plastic film is described. This comprised of a plastic film and at least one coating layer provided on the surface of the plastic film. The coating layer is prepared by dispersing electrically conductive fine particles in a compound containing an unsaturated bond capable of undergoing ...


7
Tadashi Suzuki, Hideo Sobukawa: Composite oxide, composite oxide carrier and catalyst. Kabushiki Kaisha Toyota Chuo Kenkyusho, Oblon Spivak McClelland Maier & Neustadt P C, October 23, 2001: US06306794 (63 worldwide citation)

The composite oxide and the composite oxide carrier are manufactured by the precursor forming step and firing step. The composite oxide catalyst is obtained by preparing a composite of catalytic components simultaneously with the formation of the precursor of composite oxide in the step of forming t ...


8
Hideo Kawaguchi, Takayuki Inayama: Photographic light-sensitive materials. Fuji Photo Film, Sughrue Mion Zinn Macpeak & Seas, November 29, 1983: US04418141 (57 worldwide citation)

A photographic light-sensitive material having improved antistatic properties is described, comprising a plastic support, at least one photographic light-sensitive emulsion layer on one side of the support, and an antistatic layer on the other side of the support, wherein the antistatic layer contai ...


9
Kiyoshi Taguchi, Kunihiro Ukai, Hidenobu Wakita, Seiji Fujihara: CO removal catalyst, method of producing CO removal catalyst, hydrogen purifying device and fuel cell system. Matsushita Electric Industrial, RatnerPrestia, September 4, 2007: US07265076 (55 worldwide citation)

A CO removal catalyst of inducing CO shift reaction for allowing water and carbon monoxide to react to produce hydrogen and carbon dioxide, comprising a catalyst carrier having a cerium-zirconium composite oxide and a zirconium oxide and a predetermined noble metal supported on the catalyst carrier, ...


10
Naoyuki Sugeno: Nonaqueous electrolyte secondary battery. Sony Corporation, Hill Van Santen Steadman & Simpson, December 1, 1992: US05168019 (53 worldwide citation)

A nonaqueous electrolyte secondary battery includes a cathode of a carbon material that can be doped or undoped with lithium, an anode of a primary active material composed of a composite oxide of lithium and cobalt, the cathode and the anode being disposed in a casing. LiPF.sub.6 is dissolved in a ...