1
Rudder Ronald A, Hudson George C, Hendry Robert C, Markunas Robert J: Chemical vapor deposition of diamond films using water-based plasma discharges.. Res Triangle Inst, August 24, 1994: EP0611331-A1 (11 worldwide citation)

Chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having precursors that provide carbon and etchant species that removes graphite are disclosed. The selected compounds are reacted in a CVD apparatus in a plasma created by ...


2
Ronald A Rudder, George C Hudson, Robert C Hendry, Robert J Markunas: Chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, May 23, 1995: US05418018 (10 worldwide citation)

A chemical vapor deposition (CVD) technique (process and apparatus) for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite disclosed. The selected compounds are reacted i ...


3
Ronald A Rudder, George C Hudson, Robert C Hendry, Robert J Markunas, Michael J Mantini: Process and apparatus for chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, Oblon Spivak McClelland Maier & Neustadt, January 2, 1996: US05480686 (4 worldwide citation)

A chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having desired moieties, specifically precursors that provide carbon and etchant species that remove graphite. The process involves two steps. In the first step, feedsto ...


4
Rudder Ronald A, Hudson George C, Hendry Robert C, Markunas Robert J: Chemical vapor deposition of diamond films using water-based plasma discharges. Research Triangle Institute, GNUSE Robert F, May 13, 1993: WO/1993/008927

Chemical vapor deposition (CVD) process and apparatus for the growth of diamond films using vapor mixtures of selected compounds having precursors that provide carbon and etchant species that removes graphite are disclosed. The selected compounds are reacted in a CVD apparatus in a plasma created by ...