1
Chia Hung Lai, Jiunn Jyi Lin, Tzong Sheng Chang, Min Cao, Huan Chi Tseng, Yu Hua Lee, Chin Tien Yang: Bond pad scheme for Cu process. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, March 21, 2006: US07015129 (3 worldwide citation)

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subseq ...


2
Chia Hung Lai, Jiunn Jyi Lin, Tzong Sheng Chang, Min Cao, Huan Chi Tseng, Yu Hua Lee, Chin Tien Yang: Bond pad scheme for Cu process. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, January 18, 2005: US06844626 (2 worldwide citation)

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subseq ...


3

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Chia Hung Lai, Jiunn Jyi Lin, Tzong Sheng Chang, Min Cao, Huan Chi Tseng, Yu Hua Lee, Chin Tien Yang: Bond pad scheme for cu process. Slater & Matsil, November 25, 2004: US20040235223-A1

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subseq ...


5
Chia Hung Lai, Jiunn Jyi Lin, Tzong Sheng Chang, Min Cao, Huan Chi Tseng, Yu Hua Lee, Chin Tien Yang: Bond pad scheme for Cu process. Slater & Matsil, May 5, 2005: US20050095836-A1

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subseq ...


6
Lai Chia Hung, Lin Jiunn Jyi, Chang Tzong Sheng, Cao Min, Tseng Huan Chi, Lee Yu Hua, Yang Chin Tien: Bond pad scheme for cu process. Taiwan Semiconductor Mfg, jing zhiqiang pan peikun, February 2, 2005: CN200310120177

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subseq ...