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Charlie Hotz, Puthur D Paulson, Craig Leidholm, Damoder Reddy: Back contact for thin film solar cells. Solexant, Nold Intellectual Property Law, Charles R Nold, December 28, 2010: US07858872 (8 worldwide citation)

The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses th ...


2
Puthur D Paulson, Craig Leidholm, Damoder Reddy, Charlie Hotz: Back contact for thin film solar cells. Solexant, Charles R Nold, Nold Intellectual Property Law, April 2, 2013: US08410357 (5 worldwide citation)

Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b ...


3
Jeroen Van Duren, Haifan Liang: Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers. Intermolecular, October 7, 2014: US08852989 (2 worldwide citation)

Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on t ...


4
Jeroen Van Duren, Haifan Liang: Back-contact for thin film solar cells optimized for light trapping for ultrathin absorbers. Intermolecular, December 30, 2014: US08921151

Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on t ...


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Charlie Hotz, Puthur D Paulson, Craig Leidholm, Damoder Reddy: Back contact for thin film solar cells. Solexant, Nold Intellectual Property Law, September 24, 2009: US20090235986-A1

The present invention discloses thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration having an interface layer between the back electrode and the absorber layer capable of creating an ohmic contact in the device. The present invention discloses th ...


7
Damoder Reddy, Charlie Hotz, Puthur D Paulson, Craig Leidholm: Back contact for thin film solar cells. Solexant, Nold Intellectual Property Law, September 16, 2010: US20100229931-A1

Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b ...


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VAN DUREN Jeroen, LIANG Haifan: [fr] CONTACT ARRIÈRE POUR CELLULES SOLAIRES EN COUCHES MINCES OPTIMISÉES POUR LA CAPTURE DE LUMIÈRE POUR ABSORBEURS ULTRAMINCES, [en] BACK-CONTACT FOR THIN FILM SOLAR CELLS OPTIMIZED FOR LIGHT TRAPPING FOR ULTRATHIN ABSORBERS. INTERMOLECULAR, HELMS Aubrey, May 2, 2013: WO/2013/062825

[en] Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed ...


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PAULSON PUTHUR D: Back contact for thin film solar cells. SOLEXANT, Nold Charles R, August 4, 2011: WO/2011/094368

Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b ...


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HIGH WORK FUNCTION LOW RESISTIVITY BACK CONTACT FOR THIN FILM SOLAR CELLS. INTERMOLECULAR, March 7, 2013: US20130056054-A1

Back contact materials and processes for use in the manufacturing of CdTe, CIGS, and CZTS TFPV superstrate solar cells are described. High conductivity, high work function materials of ReO3 are used to form the ohmic contact to the absorber layers of the TFPV solar cells. The ReO3 materials may be i ...