1
Rhodes Howard E: Angled pinned photodiode for high quantum efficiency and method of formation. Micron Technology, Rhodes Howard E, D AMICO Thomas J, February 10, 2005: WO/2005/013370 (3 worldwide citation)

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may ...


2
Rhodes Howard E: Angled pinned photodiode for high quantum efficiency and method of formation. Micron Technology, April 26, 2006: EP1649517-A1 (2 worldwide citation)

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may ...


3
Howard E Rhodes: Angled pinned photodiode for high quantum efficiency and method of formation. Dickstein Shapiro Morin & Oshinsky, February 3, 2005: US20050023553-A1

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may ...


4
Rhodes Howard E: Angled pinned photodiode for high quantum efficiency and method of formation. Micron Technology, yang kai liang yong, November 8, 2006: CN200480027984

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may ...


5
Rhodes Howard E: Angled pinned photodiode for high quantum efficiency and method of formation. Micron Technology, April 28, 2006: KR1020067002104

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may ...


6
Rhodes Howard E: Angled pinned photodiode for high quantum efficiency and method of formation. Micron Technology, February 4, 2008: KR1020087001448

A pinned photodiode with a surface layer of a first conductivity type laterally displaced from an electrically active area of a gate structure and a charge collection region of a second conductivity type formed by an angled implant is disclosed. The angle of the charge collection region implant may ...