1
Xinye Liu, Joshua Collins, Kaihan A Ashtiani: Adsorption based material removal process. Novellus Systems, Weaver Austin Villeneuve & Sampson, August 26, 2008: US07416989 (161 worldwide citation)

Methods for accurate and conformal removal of atomic layers of materials make use of the self-limiting nature of adsorption of at least one reactant on the substrate surface. In certain embodiments, a first reactant is introduced to the substrate in step (a) and is adsorbed on the substrate surface ...


2
Xinye Liu, Joshua Collins, Kaihan A Ashtiani: Adsorption based material removal process. Novellus Systems, Weaver Austin Villeneuve & Sampson, October 25, 2011: US08043972 (58 worldwide citation)

Methods for accurate and conformal removal of atomic layers of materials make use of the self-limiting nature of adsorption of at least one reactant on the substrate surface. In certain embodiments, a first reactant is introduced to the substrate in step (a) and is adsorbed on the substrate surface ...


3
Ivan L Berry III, Thorsten Lill: Use of ion beam etching to generate gate-all-around structure. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, January 3, 2017: US09536748 (3 worldwide citation)

Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of ...


4
Sunil Kapoor, Karl F Leeser, Adrien LaVoie, Yaswanth Rangineni: Multi-station plasma reactor with RF balancing. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, December 12, 2017: US09840776 (2 worldwide citation)

Methods and apparatus for multi-station semiconductor deposition operations with RF power frequency tuning are disclosed. The RF power frequency may be tuned according to a measured impedance of a plasma during the semiconductor deposition operation. In certain implementations of the methods and app ...


5
Thorsten Lill, Ivan L Berry III, Anthony Ricci: Ion beam etching utilizing cryogenic wafer temperatures. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, October 3, 2017: US09779955 (1 worldwide citation)

The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperatu ...


6
Ivan L Berry III, Thorsten Lill: Ion injector and lens system for ion beam milling. Lam Research Corporation, Weaver Austin Villeneuve & Sampson, March 13, 2018: US09916993

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different pur ...


7
USE OF ION BEAM ETCHING TO GENERATE GATE-ALL-AROUND STRUCTURE. March 2, 2017: US20170062181-A1

Various embodiments herein relate to methods and apparatus for performing anisotropic ion beam etching to form arrays of channels. The channels may be formed in semiconductor material, and may be used in a gate-all-around device. Generally speaking, a patterned mask layer is provided over a layer of ...


8
ION BEAM ETCHING UTILIZING CRYOGENIC WAFER TEMPERATURES. August 31, 2017: US20170250087-A1

The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperatu ...


9
ION BEAM ETCHING UTILIZING CRYOGENIC WAFER TEMPERATURES. December 28, 2017: US20170372911-A1

The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperatu ...


10
DIFFERENTIALLY PUMPED REACTIVE GAS INJECTOR. February 15, 2018: US20180047548-A1

One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on p ...