1
Gempe Horst A: Acoustical isolator and method therefor.. Motorola, February 8, 1995: EP0637875-A1 (41 worldwide citation)

A method for electrically isolating a first circuit (11) from a second circuit (12). The first and second circuits (11,12) are non-electrically coupled together. A first piezo-electric device (13), an acoustic medium (16), and a second piezo-electric device (14) forms an acoustic isolator (19). The ...


2
Costa Fran├žois, Vasic Dejan, Sarraute Emmanuel: (Fr) Circuit electronique a transformateur piezo-electrique integre, (En) Electronic circuit comprising embedded piezoelectric transformer. Centre National de La Recherche Scientifique Cnrs, Ecole Normale Superieure de Cachan, Costa Fran├žois, Vasic Dejan, Sarraute Emmanuel, BURBAUD Eric, November 25, 2004: WO/2004/102688 (34 worldwide citation)

(EN) The invention relates to an electronic circuit comprising a piezoelectric transformer (100), which is used to control an electronic component (19). According to the invention, the transformer (100) is embedded in the electronic circuit (1). The electronic circuit (100) effectively consists of: ...


3
Satwinder Malhi: Device and method for high performance high voltage operation. Texas Instruments Incorporated, Jacqueline J Garner, Richard L Donaldson, William E Hiller, April 11, 1995: US05406096 (17 worldwide citation)

A high voltage device (10) having MOS input characteristics. A low voltage MOS transistor (12) is provided which has a source (18), a drain (22), and a gate (25). A high voltage transistor (14) is also provided which has a source (20), a drain (24), and gate (16). The source (18) of the low voltage ...


4
Miettinen Erkki: Control circuit for a semiconductor switch. Abb Stroemberg Drives Oy, June 23, 1993: GB2262673-A (12 worldwide citation)

The control circuit comprises a timing logic unit 1, first and second drivers 2, 3 controlled by the timing logic unit, first and second transformers T1, T2, to which the first and the second drivers 2, 3, apply an unmodulated ac voltage signal A, B for bringing a semiconductor switch 12 into a cond ...


5
Herman P Schutten, James A Benjamin, Robert W Lade: Lateral bidirectional shielded notch FET. Eaton Corporation, Andrus Sceales Starke & Sawall, February 18, 1986: US04571512 (11 worldwide citation)

Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is substantially increased by a shielding electrode insulated between first and second gate electrodes in a notch between laterally spaced source regions and channel regions jo ...


6
Gilbert David Peter, Williams Barry W: Power switch driver arrangements. Plessey Semiconductors, April 24, 1996: EP0708529-A2 (10 worldwide citation)

In a semiconductor power switch driver circuit in which control signals for the power switch are applied by way of an isolating device such as a transformer or an optocoupler, faults which may occur at the power switch are arranged to be coded and signalled to the control circuitry by way of the iso ...


7
Zeiss Jurgen Dipl Ing Fh: High-voltage switch.. Olympia Aeg, February 7, 1990: EP0353406-A1 (10 worldwide citation)

High-voltage switch comprising several series-connected semiconductor switches (10-40, 11-41, 1N-4N) which are synchronously driven with control pulses of a control circuit. The semiconductor switches are combined in groups. In each case only one control line (ST10, ST11, ST1N) of the control circui ...


8
Kelly James Glenton, Mccall Frank Boyes: Controlling conduction of semiconductor device. Ferranti, May 25, 1983: GB2109184-A (10 worldwide citation)

A transformer-coupled drive arrangement (Figure 1) for effecting switched alternate levels of conduction in a semiconductor device e.g. a field effect switching transistor 13 comprises a drive pulse generator 14 of short (1 microsecond) intermittent drive pulses of alternate opposite polarity, a pul ...


9
Chatroux Daniel, Guyon Yves, Guidini Rodophe: Switching device for a high voltage circuit with pulse transformers. Commissariat Energie Atomique, Cogema, July 31, 1996: EP0724332-A1 (8 worldwide citation)

The switching device includes a low voltage circuit (16) which forms the primary windings of a set of transformers (118, 218...) connected in series. A set of secondary transformers (120, 220) produce switching pulses. The transformers have a toroidal core with the diameter of each of the first set ...


10
Laeuffer Jacques: Low frequency switching control circuit for field-effect transistors and insulated gate bipolar transistors.. Gen Electric Cgr, May 20, 1992: EP0486359-A1 (8 worldwide citation)

The invention relates to a control circuit for a MOSFET transistor 50 used in an inverter circuit for supplying a three-phase motor. This control circuit comprises a pulsed transformer 53 and a thresholds circuit 52 containing Zener diodes Z1 and Z2 and conventional diodes D1 and D2. Operation is su ...