1
David Sherrer
David W Sherrer, Hui Luo: External cavity semiconductor laser and method for fabrication thereof. Shipley Company, Jonathan D Baskin, Rohm and Haas Electronic Materials, November 20, 2008: US20080285601-A1

The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., ˜3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to p ...


2
David Sherrer
David W Sherrer, Hui Luo: External cavity semi-conductor laser and method for fabrication thereof. Dann Dorfman Herrell & Skillman, December 23, 2004: US20040258107-A1

The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., 3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to pr ...


3
Eugene Fitzgerald
Carl Dohrman, Saurabh Gupta, Eugene A Fitzgerald: Electro-absorption modulator device and methods for fabricating the same. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, February 20, 2007: US07180648 (8 worldwide citation)

An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical confinement region. The first layer comprises a first insulator layer, and the light-absorbing optical confinem ...


4
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structures with planar strained layers. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, August 26, 2004: US20040164318-A1

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. Th ...


5
Kawasaki Masashi, Ono Hideo, Koinuma Hideomi: Semiconductor device. Japan Science &Amp Technology, March 15, 2002: JP2002-076356 (2128 worldwide citation)

PROBLEM TO BE SOLVED: To provide a transparent transistor using a transparent channel layer of zinc oxide doped with a 3d transition metal element, etc., free from the need of heat treatment.SOLUTION: A channel layer 11 is formed of a transparent semiconductor, e.g. zinc oxide ZnO doped with a 3d tr ...


6
Larry J Hornbeck, William E Nelson: Spatial light modulator and method. Texas Instruments Incorporated, James C Kesterson, B Peter Barndt, Richard L Donaldson, March 17, 1992: US05096279 (511 worldwide citation)

A method of resetting deflectable pixels of a spatial light modulator is disclosed. A pulse train of voltage is applied to the device to cause it to mobe from its deflected position.


7
Larry J Hornbeck: Spatial light modulator and method. Texas Instruments Incorporated, Carlton H Hoel, Leo N Heiting, Melvin Sharp, May 5, 1987: US04662746 (480 worldwide citation)

An electrostatically deflectable beam spatial light modulator with the beam composed of two layers of aluminum alloy and the hinge connecting the beam to the remainder of the alloy formed in only one of the two layers; this provides a thick stiff beam and a thin compliant hinge. The alloy is on a sp ...


8
Jack L Jewell, Gregory R Olbright: Vertical-cavity surface emitting laser assay display system. Bandgap Technology Corporation, Pennie & Edmonds, June 28, 1994: US05325386 (299 worldwide citation)

A visual display system is disclosed which utilizes one- and/or two-dimensional arrays of visible emitting vertical-cavity surface-emitting lasers (VCSELs) in order to provide a desired visual display within an observer's field of view. Sweep and subscanning techniques are employed, individually or ...


9
Jeffrey B Sampsell, Terrance G McDonald: Optical fiber interconnection network including spatial light modulator. Texas Instruments Incorporated, Carlton H Hoel, James T Comfort, Melvin Sharp, August 15, 1989: US04856863 (267 worldwide citation)

A crossbar switch (200) with bifurcated optical fibers (271, . . . , 286) having equivalent ends connected to transmitters (251, . . . , 254) and receivers (261, . . . , 264) and single ends in a linear array (245) that is adjacent to a linear micro lens array (240) and a linear spatial light modula ...


10
Eric A Swanson, Stephen R Chinn: Method and apparatus for performing optical measurements using a rapidly frequency-tuned laser. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, September 21, 1999: US05956355 (261 worldwide citation)

An optical system, in one embodiment including an external-cavity frequency-tuned laser having a tunable longitudinal cavity mode and a center tunable wavelength. The external-cavity frequency-tuned laser includes an optical cavity, an optical gain medium positioned within the optical cavity, and a ...



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