1
David Sherrer
David W Sherrer, Hui Luo: External cavity semiconductor laser and method for fabrication thereof. Shipley Company, Jonathan D Baskin, Rohm and Haas Electronic Materials, November 20, 2008: US20080285601-A1

The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., ˜3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to p ...


2
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Rahmachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. Frederick W Gibb Iii, Gibb & Rahman, January 24, 2008: US20080019077-A1

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


3
David Sherrer
David W Sherrer, Hui Luo: External cavity semi-conductor laser and method for fabrication thereof. Dann Dorfman Herrell & Skillman, December 23, 2004: US20040258107-A1

The present invention concerns a design for an external cavity single mode laser wherein a short optical path length for the optical cavity (e.g., 3 to 25 mm) provides sufficient spacing of the longitudinal modes allowing a single wavelength selective element, such as a microfabricated etalon, to pr ...


4
Eugene Fitzgerald
Carl Dohrman, Saurabh Gupta, Eugene A Fitzgerald: Electro-absorption modulator device and methods for fabricating the same. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, February 20, 2007: US07180648 (8 worldwide citation)

An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical confinement region. The first layer comprises a first insulator layer, and the light-absorbing optical confinem ...


5
Eugene Fitzgerald
Minjoo L Lee, Christopher W Leitz, Eugene A Fitzgerald: Structures with planar strained layers. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, August 26, 2004: US20040164318-A1

A structure and a method for forming the structure, the method including forming a compressively strained semiconductor layer, the compressively strained layer having a strain greater than or equal to 0.25%. A tensilely strained semiconductor layer is formed over the compressively strained layer. Th ...


6
Kawasaki Masashi, Ono Hideo, Koinuma Hideomi: Semiconductor device. Japan Science &Amp Technology, March 15, 2002: JP2002-076356 (2303 worldwide citation)

PROBLEM TO BE SOLVED: To provide a transparent transistor using a transparent channel layer of zinc oxide doped with a 3d transition metal element, etc., free from the need of heat treatment.SOLUTION: A channel layer 11 is formed of a transparent semiconductor, e.g. zinc oxide ZnO doped with a 3d tr ...


7
Larry J Hornbeck, William E Nelson: Spatial light modulator and method. Texas Instruments Incorporated, James C Kesterson, B Peter Barndt, Richard L Donaldson, March 17, 1992: US05096279 (511 worldwide citation)

A method of resetting deflectable pixels of a spatial light modulator is disclosed. A pulse train of voltage is applied to the device to cause it to mobe from its deflected position.


8
Larry J Hornbeck: Spatial light modulator and method. Texas Instruments Incorporated, Carlton H Hoel, Leo N Heiting, Melvin Sharp, May 5, 1987: US04662746 (481 worldwide citation)

An electrostatically deflectable beam spatial light modulator with the beam composed of two layers of aluminum alloy and the hinge connecting the beam to the remainder of the alloy formed in only one of the two layers; this provides a thick stiff beam and a thin compliant hinge. The alloy is on a sp ...


9
Jack L Jewell, Gregory R Olbright: Vertical-cavity surface emitting laser assay display system. Bandgap Technology Corporation, Pennie & Edmonds, June 28, 1994: US05325386 (316 worldwide citation)

A visual display system is disclosed which utilizes one- and/or two-dimensional arrays of visible emitting vertical-cavity surface-emitting lasers (VCSELs) in order to provide a desired visual display within an observer's field of view. Sweep and subscanning techniques are employed, individually or ...


10
Bin Ma, David B Knowles, Cory S Brown, Drew Murphy, Mark E Thompson: Organic light emitting materials and devices. Universal Display Corporation, The University of Southern California, Kenyon & Kenyon, February 3, 2004: US06687266 (290 worldwide citation)

An organic light emitting device is provided. The device includes an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes material having the structure:



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