1
Dana Gronbeck Jeffrey Calvert
Michael K Gallagher, Dana A Gronbeck, Timothy G Adams, Jeffrey M Calvert: Electronic devices having air gaps. Rohm and Haas Electronic Materials, Jonathan D Baskin, May 25, 2010: US07723850 (9 worldwide citation)

A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an elec ...


2
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Zhong Xiang He, Anthony K Stamper, Eric J White: Integrated BEOL thin film resistor. International Business Machines Corporation, Anthony J Canale, March 8, 2011: US07902629 (5 worldwide citation)

In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the ...


3
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Zhong Xiang He, Anthony K Stamper, Eric J White: Integrated BEOL thin film resistor. International Business Machines Corporation, Anthony J Canale, January 10, 2012: US08093679 (2 worldwide citation)

In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the ...


4
Erwin Meinders
Lankhorst Martijn H R, de Theije Femke K, Meinders Erwin R, Wolf Ronald M: Electric device comprising phase change material. Koninklijke Philips Electronics, June 8, 2005: KR1020057006241

The electric device (1, 100) comprises a resistor (36, 250) comprising a phase change material which is able to be in a first phase and in a second phase. The resistor (36, 250) has an electrical resistance which has a first value when the phase change material is in the first phase and a second val ...


5
Steven T Harshfield: Memory array having a multi-state element and method for forming such array or cells thereof. Micron Technology, Fletcher Yoder & Van Someren, February 9, 1999: US05869843 (367 worldwide citation)

A memory device having a plurality of memory arrays. Each array has a plurality of memory cells, each memory cell including an electrode defining a respective contact area. Each memory array is formed by depositing a continuous chalcogenide layer. This chalcogenide layer, even when continuous, will ...


6
Takashi Kato, Masao Taguchi: Three-dimensional integrated circuit and manufacturing method thereof. Fujitsu, Staas & Halsey, July 3, 1990: US04939568 (334 worldwide citation)

The present invention is directed to a three-dimensional stacked IC and a method for forming a three-dimensional stacked IC on a base plate. The three-dimensional stacked IC includes a unit semiconductor IC, which has constituent ICs formed on either one surface or on both surfaces of a substrate. I ...


7
Woo Hyeong Lee, Lalita Manchanda: Electronic components with doped metal oxide dielectric materials and a process for making electronic components with doped metal oxide dielectric materials. Lucent Technologies, Richard J Botos, July 13, 1999: US05923056 (294 worldwide citation)

A doped, metal oxide dielectric material and electronic components made with this material are disclosed. The metal oxide is a Group III or Group VB metal oxide (e.g. Al.sub.2 O.sub.3, Y.sub.2 O.sub.3, Ta.sub.2 O.sub.5 or V.sub.2 O.sub.5) and the metal dopant is a Group IV material (Zr, Si, Ti, and ...


8
Kito Takashi, Aochi Hideaki, Katsumata Ryuta, Nitayama Akihiro, Kito Masaru, Tanaka Hiroyasu: Non-volatile semiconductor memory device and manufacturing method therefor. Toshiba, October 11, 2007: JP2007-266143 (267 worldwide citation)

PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device which has a novel structure, wherein memory cells are stacked three-dimensionally and which can reduce the chip area.SOLUTION: The non-volatile semiconductor memory device includes a plurality of memory strings, to which a p ...


9
Zvi Or Bach, Laurence Cooke, Adrian Apostol, Romeo Iacobut: Semiconductor device. eASIC Corporation, Venable, Jeffrey W Gluck, September 12, 2006: US07105871 (265 worldwide citation)

A semiconductor device may include a borderless logic array and area I/Os. The logic array may comprise a repeating core, and at least one of the area I/Os may be a configurable I/O. Furthermore, the configurable I/O may comprise at least one metal layer that is the same for all I/O configurations.


10
Amr M Mohsen, Esmat Z Hamdy, John L McCollum: Selectively formable vertical diode circuit element. Actel Corporation, Lyon & Lyon, November 14, 1989: US04881114 (265 worldwide citation)

A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second la ...