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Bantval Jayant Baliga: Power semiconductor devices having improved high frequency switching and breakdown characteristics. North Carolina State University, Myers Bigel Sibley & Sajovec, December 7, 1999: US05998833 (350 worldwide citation)

Integrated power semiconductor devices having improved high frequency switching performance, improved edge termination characteristics and reduced on-state resistance include GD-UMOSFET unit cells with upper trench-based gate electrodes and lower trench-based source electrodes. The use of the trench ...


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Ronald M Wolf, Paulus W M Blom, Marcellinus P C M Krijn: Switching element with memory provided with Schottky tunnelling barrier. U S Philips Corporation, Steven R Biren, April 30, 1996: US05512773 (195 worldwide citation)

A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier ...


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Nishant Sinha: Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias. Micron Technology, TraskBritt, March 18, 2008: US07345350 (175 worldwide citation)

A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole is formed in the substrate extending between the first surface and the opposing, second surface. A seed ...


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Donald L Plumton: Vertical field effect transistor and diode. Texas Instruments Incorporated, Carlton H Hoel, W James Brady, Frederick J Telecky Jr, August 1, 2000: US06097046 (170 worldwide citation)

A vertical field effect transistor (1400) and diode (1450) formed on a single III-V substrate. The diode cathode and the transistor drain or collector may be formed in a common layer (1408).


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Manoj Mehrotra, Bantval J Baliga: Schottky barrier rectifier with MOS trench. North Carolina State University, Bell Seltzer Park & Gibson, November 15, 1994: US05365102 (165 worldwide citation)

A trench MOS Schottky barrier rectifier includes a semiconductor substrate having first and second faces, a cathode region of first conductivity type at the first face and a drift region of first conductivity type on the cathode region, extending to the second face. First and second trenches are for ...


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Richard K Williams, Shekar S Malikarjunaswamy, Jacek Korec, Wayne B Grabowski: Trench-gated Schottky diode with integral clamping diode. Siliconix Incorporated, David E Steuber, James E Parsons, Skjerven Morrill MacPherson Franklin & Friel, June 20, 2000: US06078090 (118 worldwide citation)

A trench-gated Schottky diode of the kind described in U.S. Pat. No. 5,365,102 is provided with an integral clamping diode which protects the gate oxide from damage from high electric fields and hot carrier generation when the device is reverse-biased. The clamping diode is arranged in parallel with ...


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Kusumoto Osamu, Kitabatake Makoto, Takahashi Kunimasa, Yamashita Kenya, Miyanaga Ryoko, Uchida Masao: Semiconductor device and method for manufacturing same. Matsushita Electric, August 25, 2004: EP1450394-A1 (96 worldwide citation)

An accumulation-mode MISFET comprises: a high-resistance SiC layer 102 epitaxially grown on a SiC substrate 101; a well region 103; an accumulation channel layer 104 having a multiple delta -doped layer formed on the surface region of the well region 103; a contact region 105; a gate insulating film ...


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Bantval J Baliga: Schottky barrier rectifiers and methods of forming same. North Carolina State University, Bell Seltzer Park & Gibson, March 18, 1997: US05612567 (93 worldwide citation)

A Schottky rectifier includes MOS-filled trenches and an anode electrode at a face of a semiconductor substrate and an optimally nonuniformly doped drift region therein which in combination provide high blocking voltage capability with low reverse-biased leakage current and low forward voltage drop. ...


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Masashi Mizuta, Masaaki Kuzuhara, Yasunobu Nashimoto, Kazunori Asano, Yosuke Miyoshi, Yasunori Mochizuki: Fet having non-overlapping field control electrode between gate and drain. NEC Corporation, Foley & Lardner, August 8, 2000: US06100571 (88 worldwide citation)

A field control electrode 9 is formed over an insulating film 6 on a channel layer 2, between a gate electrode 5 and a drain electrode 8. Tantalum oxide (Ta.sub.2 O.sub.5), for example, may be used as the material for the insulating film 6.