1
Eb Eshun
Shashank S Ekbote, Kwan Yong Lim, Ebenezer Eshun, Youn Sung Choi: Silicide formation due to improved SiGe faceting. TEXAS INSTRUMENTS INCORPORATED, Jacqueline J Garner, Frank D Cimino, December 1, 2015: US09202883 (1 worldwide citation)

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


2
Eb Eshun
Shashank S Ekbote, Kwan Yong Lim, Ebenezer Eshun, Youn Sung Choi: Silicide formation due to improved SiGe faceting. TEXAS INSTRUMENTS INCORPORATED, Jacqueline J Garner, Frank D Cimino, August 2, 2016: US09406769

An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is e ...


3
Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Ilyas Mohammed: Interposer having molded low cte dielectric. Tessera Research, October 25, 2012: US20120267751-A1

A method for making an interconnection component is disclosed, including forming a plurality of metal posts extending away from a reference surface. Each post is formed having a pair of opposed end surface and an edge surface extending therebetween. A dielectric layer is formed contacting the edge s ...


4
Eb Eshun
BOOTH ROGER A JR, COOLBAUGH DOUGLAS D, ESHUN EBENEZER E, HE ZHONG XIANG: [en] Interdigitated vertical parallel capacitor. IBM, May 23, 2012: GB2485693-A

[en] An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated fro ...


5
Eb Eshun
Coolbaugh Douglas D, Eshun Ebenezer E, Rassel Richard J, Rassel Robert M: Tunable temperature coefficient of resistance resistors and method of fabricating same. Ibm, zhang gao, July 12, 2006: CN200610051337

Tunable TCR resistors incorporated into integrated circuits and a method fabricating the tunable TCR resistors. The tunable TCR resistors including two or more resistors of two or more different materials having opposite polarity and different magnitude TCRs, the same polarity and different magnitud ...


6
Eric R Fossum, Sunetra Mendis, Sabrina E Kemeny: Active pixel sensor with intra-pixel charge transfer. California Institute of Technology, Michael L Keller, Robert M Wallace, November 28, 1995: US05471515 (732 worldwide citation)

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the ...


7
Patrick J Klersy, David C Jablonski, Stanford R Ovshinsky: Thin-film structure for chalcogenide electrical switching devices and process therefor. Energy Conversion Devices, Marvin S Siskind, January 5, 1993: US05177567 (493 worldwide citation)

Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material ...


8
Esmat Z Hamdy, Amr M Mohsen, John L McCullum: Electrically-programmable low-impedance anti-fuse element. Actel Corporation, Lyon & Lyon, February 6, 1990: US04899205 (194 worldwide citation)

Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which ...


9
John L McCollum, Shih Ou Chen: Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer. Actel Corporation, Kenneth D Alessandro, December 3, 1991: US05070384 (187 worldwide citation)

An electrically programmable antifuse element incorporates a composite interlayer of dielectric material and amorphous silicon interposed between two electrodes. The lower electrode may be formed from a refractory metal such as tungsten. Preferably, a thin layer of titanium is deposited over the tun ...


10
Pallab K Chatterjee, Ashwin H Shah: Vertical DRAM cell and method. Texas Instruments Incorporated, Douglas A Sorensen, James T Comfort, Melvin Sharp, June 16, 1987: US04673962 (182 worldwide citation)

DRAM cells and arrays of cells on a semiconductor substrate, together with methods of fabrication, are disclosed wherein the cells are formed in pairs or quartets by excavating a trench or two trenches through the cell elements to split an original cell into two or four cells during the fabrication. ...