61
Harufusa Kondou, Masao Nakaya: Method for producing a three-dimensional type semiconductor device. Mitsubishi Denki Kabushiki Kaisha, Lowe Price LeBlanc Becker & Shur, February 20, 1990: US04902637 (98 worldwide citation)

A method for producing a three-dimensional type semiconductor device comprises a first semiconductor integrated circuit layer comprising active regions, insulating layers, gate electrodes, and interconnection layers; an insulating layer formed thereon; and a second semiconductor integrated circuit l ...


62
Masao Kimura: Solid state imaging device and manufacturing method thereof. Sony Corporation, Sonnenschein Nath & Rosenthal, July 10, 2001: US06259083 (97 worldwide citation)

A solid state imaging device with a high sensitivity is obtained by introducing an incident light to be incident on a light receiving portion widely. In the solid state imaging device, a layer (


63
Federico Canini, Marco Piva, Rinaldo Zocca: Device and method for the acquisition and automatic processing of data obtained from optical codes. Datalogic S p A, Lowe Hauptman Gilman & Berner, January 28, 2003: US06512218 (95 worldwide citation)

The device for the acquisition and automatic processing of data obtained from optical codes comprises a CMOS optical sensor; an analog processing unit connected to the optical sensor; an analog/digital conversion unit connected to the analog processing unity; a logic control unit connected to the CM ...


64
Dai Hisamoto, Toru Kaga, Shinichiro Kimura, Masahiro Moniwa, Haruhiko Tanaka, Atsushi Hiraiwa, Eiji Takeda: Method of manufacturing a semiconductor device having silicon islands. Hitachi, Antonelli Terry Stout & Kraus, November 14, 1995: US05466621 (95 worldwide citation)

A semiconductor device such as FET or charge coupled device, having a channel or a charge coupled portion provided in a thin semiconductor layer which is nearly perpendicular to the substrate and to which the necessary electrode such as the gate electrode and the necessary insulating layer are added ...


65
Akira Okita, Toru Koizumi, Masanori Ogura, Shin Kikuchi, Tetsuya Itano: Solid state image pickup device and camera. Canon Kabushiki Kaisha, Fitzpatrick Cella Harper & Scinto, January 22, 2008: US07321110 (92 worldwide citation)

An solid state image pickup device including a plurality of photoelectric conversion regions (PD1, PD2) for generating carriers by photoelectric conversions to accumulate the generated carriers, an amplifying unit for amplifying the carriers, being commonly provided to at least two photoelectric con ...


66
Hess Martin S, Krolikowski Walter F: Semiconductor device, method, and memory array. Cogar Corporation, April 27, 1971: US3576549 (91 worldwide citation)

This disclosure relates to a semiconductor device which has a first electrical state prior to the application of a particular voltage to at least one conductor thereof and a second, different, irreversible electrical state after the voltage was applied to the selected conductor. A method of forming ...


67
Richard Ian Olsen, Darryl L Sato, Borden Moller, Olivera Vitomirov, Jeffrey A Brady, Ferry Gunawan, Remzi Oten, Feng Qing Sun, James Gates: Digital camera with integrated infrared (IR) response. July 28, 2009: US07566855 (90 worldwide citation)

There are many, many inventions described herein. In one aspect, what is disclosed is a digital camera including a plurality of arrays of photo detectors, including a first array of photo detectors to sample an intensity of light of a first wavelength and a second array of photo detectors to sample ...


68
Keh Fei C Chi: Formation of vertical polysilicon resistor having a nitride sidewall for small static RAM cell. Chartered Semiconductor Manufacturing, George O Saile, July 19, 1994: US05330930 (90 worldwide citation)

A new method of forming a polysilicon resistor is achieved. Polysilicon gate structures and source/drain regions are formed in and on a semiconductor substrate. A passivation layer is formed overlying the gate structures. A contact window is opened to the drain portion of the source/drain region. A ...


69
Tsuchiya Kaoru: Fabricating method of semiconductor device. Semiconductor Energy Lab, June 18, 2009: JP2009-135350 (89 worldwide citation)

PROBLEM TO BE SOLVED: To fabricate a semiconductor device which is further integrated, thinned and downsized, and to achieve a high performance and low power consumption in the semiconductor device.SOLUTION: A semiconductor device layer which is peeled from a substrate using a peeling layer is lamin ...


70
Chao Ming Koh: Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell. Vanguard International Semiconductor, George O Saile, William J Stoffel, September 10, 1996: US05554557 (88 worldwide citation)

The present invention provides a method of manufacturing a fence shaped capacitor for a DRAM which begins by providing a substrate including a field effect transistor having a transfer gate with nitride sidewall spacers. Next, a first insulation layer, a first polysilicon layer and a second insulati ...