21
Eric J Seibel, Thomas A Furness III: Miniature image acquistion system using a scanning resonant waveguide. University of Washington, Steven P Koda, September 25, 2001: US06294775 (166 worldwide citation)

A minimally invasive, medical, image acquisition having a flexible optical fiber serving as an illuminating wave guide. In one resonance mode, the distal end of the fiber is a stationary node. The fiber includes a lens at the distal tip which collimates emitted light. A scan lens is positioned off t ...


22
Kazuo Yano, Yasuhiko Sasaki: Semiconductor integrated circuit device and production method thereof. Hitachi, Fay Sharpe Beall Fagan Minnich & McKee, December 3, 1996: US05581202 (166 worldwide citation)

The semiconductor integrated circuit enjoys a high performance and can be produced at a low production cost and within a short time. A cell has an internal circuit connection such that an output terminal is connected to a plurality of input terminals through source-drain paths of active devices conn ...


23
John Scott Thomas, Alex Roustaei, Paul Vulpoiu: Ambient light detection technique for an imaging array. Symagery Microsystems, Pearne & Gordon, October 22, 2002: US06469289 (153 worldwide citation)

This invention is directed to a method and apparatus for determining the level of ambient light impinging on a selected number of pixels in an imaging array where each pixel includes a photodiode. The ambient light may be determined by resetting the pixels in the array and by detecting current flow ...


24
Francine Y Robb, Stephen P Robb: Fabricating dual gate thin film transistors. Motorola, Joe E Barbee, Rennie William Dover, November 30, 1993: US05266515 (153 worldwide citation)

A method for fabricating a dual gate thin film transistor using a power MOSFET process having a first gate area (22) made from a monocrystalline silicon. A dielectric layer (25) is formed over the monocrystalline silicon. A first gate electrode (58) contacts the first gate area (22). A thin film tra ...


25
Johann Alsmeier, Reinhard J Stengl: Deep trench dram process on SOI for low leakage DRAM cell. Siemens Aktiengesellschaft, Adel A Ahmed, Dexter K Chin, May 6, 1997: US05627092 (151 worldwide citation)

A deep trench DRAM cell is formed on a silicon on isolator (SOI) substrate, with a buried strap formed by outdiffusion of dopant in associated trench node material, for providing an electrical connection between the trench node and the active area of a MOS transfer gate formed in the substrate adjac ...


26
Sven E Wahlstrom: Multilevel integrated circuits employing fused oxide layers. Flehr Hohbach Test Albritton & Herbert, May 9, 1989: US04829018 (150 worldwide citation)

A multilevel semiconductor integrated circuit is fabricated by providing a plurality of substrates having an epitaxial layer on one surface and a silicon oxide layer on the surface of the epitaxial layer. The substrates are sequentially stacked with the silicon oxide layers in contact and fused toge ...


27
James Allan Bondur, Hans Bernhard Pogge: Method for forming isolated regions of silicon utilizing reactive ion etching. International Business Machines Corporation, George O Saile, August 1, 1978: US04104086 (148 worldwide citation)

A method for isolating regions of silicon involving the formation of openings that have a suitable taper in a block of silicon, thermally oxidizing the surfaces of the openings, and filling the openings with a dielectric material to isolate regions of silicon within the silicon block. The method is ...


28
Seki Syunichi, Kiguchi Hiroshi, Yudasaka Ichio, Miyajima Hiroo: Method for manufacturing a patterned thin film device. Seiko Epson, March 29, 2000: EP0989778-A1 (147 worldwide citation)

Display devices such as EL elements or LED elements, or color filters, are provided, wherewith, when forming thin films such as organic semiconductor films or colored resins, there is remarkably little variation in film thickness from pixel to pixel. When fabricating thin film elements having banks ...


29
Gang Yu: Image sensors made from organic semiconductors. Uniax Corporation, October 9, 2001: US06300612 (146 worldwide citation)

Image sensors with monochromatic or multi-color response made from organic semiconductors are disclosed. The image sensors are comprised of image sensing elements (pixels) each of which comprises a thin layer (or multiple layers) of organic semiconductor(s) sandwiched between conductive electrodes. ...


30
Charles H Dennison, Randhir P S Thakur: Method for forming enhanced capacitance stacked capacitor structures using hemi-spherical grain polysilicon. Micron Semiconductor, David J Paul, August 23, 1994: US05340765 (145 worldwide citation)

The present invention develops a container capacitor by forming a conductively doped polysilicon plug between a pair of neighboring parallel conductive word lines; forming a planarized tetra-ethyl-ortho-silicate (TEOS) insulating layer over the parallel conductive word lines and the plug; forming a ...