1
David Bohling
Eric Anthony Robertson III, David Arthur Bohling, Mark Allen George, Scott Edward Beck: Gas phase removal of SiO.sub.2 /metals from silicon. Air Products and Chemicals, Geoffrey L Chase, December 12, 2000: US06159859 (4 worldwide citation)

The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature approp ...


2
Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Brian Marcucci: Microelectronic assembly with impedance controlled wirebond and reference wirebond. Tessera, Lerner David Littenberg Krumholz & Mentlik, January 7, 2014: US08624407

A microelectronic device, e.g., semiconductor chip, is connected with an interconnection element having signal contacts and reference contacts, the reference contacts being connectable to a reference potential such as ground or power. Signal conductors, e.g., signal wirebonds can be connected to dev ...


3
Belgacem Haba Belgacem (Bel) Haba
Belgacem Haba, Brian Marcucci: Microelectronic assembly with impedance controlled wirebond and reference wirebond. Tessera, Lerner David Littenberg Krumholz & Mentlik, August 28, 2012: US08253259

A microelectronic assembly can include a microelectronic device, e.g., semiconductor chip, connected together with an interconnection element, e.g., substrate, the latter having signal contacts and reference contacts. The reference contacts can be connectable to a source of reference potential such ...


4
Shyam Venkataraman
Yuzhuo Li, Harvey Wayne Pinder, Shyam S Venkataraman: Chemical mechanical polishing (cmp) polishing solution with enhanced performance. Basf Se, November 3, 2011: US20110269312-A1

This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the li ...


5
Young Bae
Young Cheol BAE, Yi Liu, Thomas Cardolaccia, Peter Trefonas III: Compositions and methods for multiple exposure photolithography. Rohm and Haas Electronic Materials, Jonathan D Baskin, Rohm and Haas Electronic Materials, November 25, 2010: US20100297851-A1

Compositions for use in multiple exposure photolithography and methods of forming electronic devices using a multiple exposure lithographic process are provided. The compositions find particular applicability in semiconductor device manufacture for making high-density lithographic patterns.


6
Matthias Bauer
Matthias Bauer, Gregory M Bartlett: Methods and apparatus for a gas panel with constant gas flow. ASM America, The Noblitt Group PLLC, May 20, 2014: US08728239 (1 worldwide citation)

A gas panel according to various aspects of the present invention is configured to deliver a constant flow rate of gases to a reaction chamber during a deposition process step. In one embodiment, the gas panel comprises a deposition sub-panel having a deposition injection line, a deposition vent lin ...


7
Matthias Bauer
Matthias Bauer, Shawn G Thomas: Cyclical epitaxial deposition and etch. ASM America, May 19, 2011: US20110117732-A1

Methods for selectively depositing high quality epitaxial material include introducing pulses of a silicon-source containing vapor while maintaining a continuous etchant flow. Epitaxial material is deposited on areas of a substrate, such as source and drain recesses. Between pulses, the etchant flow ...


8
Matthias Bauer
Matthias Bauer: Separate injection of reactive species in selective formation of films. Asm America, Knobbe Martens Olson & Bear, April 15, 2010: US20100093159-A1

Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors ...


9
John S Ogle: Method and apparatus for producing magnetically-coupled planar plasma. LAM Research Corporation, Townsend and Townsend, August 14, 1990: US04948458 (379 worldwide citation)

An apparatus for producing a planar plasma in a low pressure process gas includes a chamber and an external planar coil. Radiofrequency resonant current is induced in the planar coil which in turn produces a planar magnetic field within the exclosure. The magnetic field causes circulating flux of el ...


10
Klaus D Beyer, William L Guthrie, Stanley R Makarewicz, Eric Mendel, William J Patrick, Kathleen A Perry, William A Pliskin, Jacob Riseman, Paul M Schaible, Charles L Standley: Chem-mech polishing method for producing coplanar metal/insulator films on a substrate. International Business Machines Corporation, John A Stemwedel, July 31, 1990: US04944836 (327 worldwide citation)

A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel ...