1
Belgacem Haba Belgacem (Bel) Haba
Richard Dewitt Crisp, Wael Zohni, Belgacem Haba, Frank Lambrecht: Stub minimization for multi-die wirebond assemblies with parallel windows. Invensas Corporation, Lerner David Littenberg Krumholz & Mentlik, May 14, 2013: US08441111 (30 worldwide citation)

A microelectronic package can include a substrate having first and second opposed surfaces and first and second apertures extending between the first and second surfaces, first and second microelectronic elements each having a surface facing the first surface of the substrate, a plurality of termina ...


2
Belgacem Haba Belgacem (Bel) Haba
Richard Dewitt Crisp, Wael Zohni, Belgacem Haba, Frank Lambrecht: Stub minimization for multi-die wirebond assemblies with parallel windows. Invensas Corporation, Lerner David Littenberg Krumholz & Mentlik, May 7, 2013: US08436457 (30 worldwide citation)

A microelectronic package can include a substrate having first and second opposed surfaces and first and second apertures extending between the first and second surfaces, first and second microelectronic elements each having a surface facing the first surface of the substrate, a plurality of termina ...


3
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina, Power Michael Brendan: Organometallic germanium compounds suitable for use in vapor deposition processes. Rohm &Amp, Haas Elect Materials, October 6, 2004: EP1464724-A2 (8 worldwide citation)

Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly usef ...


4
Deodatta Shenai-Khatkhate
Woelk Egbert, Shenai Khatkhate Deodatta Vina: Germanium compounds suitable for use in vapor deposition processes. Rohm & Haas Elect Materials, October 6, 2004: EP1464725-A2 (7 worldwide citation)

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.


5
Eb Eshun
Roger A Booth Jr, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He: Interdigitated vertical parallel capacitor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Katherine S Brown, February 19, 2013: US08378450 (4 worldwide citation)

An interdigitated structure may include at least one first metal line, at least one second metal line parallel to the at least one first metal line and separated from the at least one first metal line, and a third metal line contacting ends of the at least one first metal line and separated from the ...


6
Ivo Koutsaroff 掘露 伊保龍
Ivoyl Koutsaroff, Shinichi Higai, Akira Ando: Perovskite material with anion-controlled dielectric properties, thin film capacitor device, and method for manufacturing the same. Murata Manufacturing, Keating & Bennett, September 30, 2014: US08848336 (3 worldwide citation)

A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3− anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3-δ)α-(ABO3-δ-γNγ)1-α. A represents a divalent element, B represents a tetravalent elemen ...


7
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Jeffrey B Johnson, Jonghae Kim, Jean Oliver Plouchart, Anthony K Stamper: Passive components in the back end of integrated circuits. International Business Machines Corporation, Anthony J Canale, October 18, 2011: US08039354 (3 worldwide citation)

Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical ...


8
Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vina: Process for the preparation of germanium compounds. Rohm &Amp, Haas Elect Materials, October 6, 2004: EP1464647-A2 (2 worldwide citation)

Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.


9
Belgacem Haba Belgacem (Bel) Haba
Ilyas Mohammed, Belgacem Haba, Cyprian Uzoh, Piyush Savalia, Vage Oganesian: High density three-dimensional integrated capacitors. Tessera, Lerner David Littenberg Krumholz & Mentlik, June 3, 2014: US08742541 (1 worldwide citation)

A capacitor can include a substrate having a first surface, a second surface remote from the first surface, and a through opening extending between the first and second surfaces, first and second metal elements, and a capacitor dielectric layer separating and insulating the first and second metal el ...


10
Belgacem Haba Belgacem (Bel) Haba
Vage Oganesian, Belgacem Haba, Ilyas Mohammed, Piyush Savalia: High density three-dimensional integrated capacitors. Tessera, Lerner David Littenberg Krumholz & Mentlik, August 6, 2013: US08502340 (1 worldwide citation)

A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient of thermal expansion of less than 10 ppm/° C. The substrate can have a surface and an opening extending downwardly therefrom. The capacitor ...