1
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, July 4, 2000: US06084796 (267 worldwide citation)

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


2
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Arizona Board of Regents, Snell & Wilmer, June 22, 1999: US05914893 (241 worldwide citation)

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


3
Michael N Kozicki, William C West: Programmable metallization cell structure and method of making same. Axon Technologies Corporation, Snell & Wilmer L, April 20, 1999: US05896312 (229 worldwide citation)

A programmable metallization cell ("PMC") comprises a fast ion conductor such as a chalcogenide-metal ion and a plurality of electrodes (e.g., an anode and a cathode) disposed at the surface of the fast ion conductor and spaced a set distance apart from each other. Preferably, the fast ion conductor ...


4
Shin Jin Koog, Kim Kyu Tae, Jung Min Jae, Yoon Sang Soo, Han Young Soo, Lee Jae Eun: Method of horizontally growing carbon nanotubes and field effect transistor using the carbon nanotubes grown by the method. LG Electronics, February 13, 2002: GB2364933-A (143 worldwide citation)

Disclosed is a method of horizontally growing carbon nanotubes, in which the carbon nanotubes can be selectively grown in a horizontal direction at specific locations of a substrate having catalyst formed thereat, so that the method can be usefully utilized in fabricating nano-devices. The method in ...


5
Buckley William D: Filament-type memory semiconductor device and method of making the same. Energy Conversion Devices, Wallenstein Spangenberg Hattis & Strampel, May 27, 1975: US3886577 (112 worldwide citation)

An improved memory device to be used in a D.C. curcuit which device includes a pair of spaced electrodes between which extends a body of a generally amorphous high resistance memory semiconductor material made of a composition of at least two elements and wherein the application to the electrodes of ...


6
Aviram Arieh, Seiden Philip E: Organic memory device. International Business Machines Corporation, Match Isidore, September 3, 1974: US3833894 (90 worldwide citation)

The organic memory device described herein comprises an organic compound having a molecular structure which includes a mixed valence double well of an organic or organometallic redox couple separated by a .sigma., i.e., a non-conjugated bridge, the two components of the redox couple being the respec ...


7
Kari Kirjavainen: Electromechanical film and procedure for manufacturing same. Pahl Lorusso & Loud, March 31, 1987: US04654546 (89 worldwide citation)

The present invention concerns a dielectric film for converting electromagnetic or electrostatic energy into mechanical work, and a procedure for manufacturing the film. The film of the invention consists of a homogeneous film layer foamed to be of full-cell type and which has been oriented by stret ...


8
Wyn K Swainson, Stephen D Kramer: Method and media for accessing data in three dimensions. Formigraphic Engine Corporation, Townsend & Townsend, September 11, 1984: US04471470 (80 worldwide citation)

Methods and active media for controlled production and optical access of data in the form of physio-chemical inhomogeneities, such as controlled differences in absorption characteristics of molecules at selected regions. The methods involve use of at least two intersecting beams of radiation which a ...


9
Wyn K Swanson, Stephen D Kremer: Three dimensional systems. March 7, 1978: US04078229 (75 worldwide citation)

Method and media are provided for producing three-dimensional sensible objects by the intersection of radiation beams, whereby an active region is produced as a result of the intersection of said beams raising a molecule in the active region to its excited state. Particularly, non-radiation emissive ...


10
Nakazato Kazuo, Itoh Kiyoo, Mizuta Hiroshi, Sato Toshihiko, Shimada Toshikazu, Ahmed Haroon: Memory device. Hitachi Europ, May 20, 1998: EP0843361-A1 (68 worldwide citation)

A memory device includes a memory node (1) to which charge is written through a tunnel barrier configuration (2) from a control electrode (9). The stored charge effects the conductivity of a source/drain path (4) and data is read by monitoring the conductivity of the path. The charge barrier configu ...