1
Bahman Qawami
Robert C Chang, Bahman Qawami, Farshid Sabet Sharghi: Maintaining erase counts in non-volatile storage systems. SanDisk Corporation, Ritter Lang & Kaplan, December 14, 2004: US06831865 (79 worldwide citation)

Methods and apparatus for storing erase counts in a non-volatile memory of a non-volatile memory system are disclosed. According to one aspect of the present invention, a data structure in a non-volatile memory includes a first indicator that provides an indication of a number of times a first block ...


2
Ulrich Klostermann
Daniel Braun, Rainer Leuschner, Ulrich Klostermann: MRAM with magnetic via for storage of information and field sensor. Infineon Technologies, Altis Semiconductor, Dicke Billig & Czaja PLLC, August 15, 2006: US07092284 (45 worldwide citation)

A magnetic memory element is disclosed. The magnetic memory element includes a magnetic via for storing information, made of a magnetic material and being vertically oriented relative to a wafer surface on which the magnetic memory element is formed, the magnetic via having a magnetic anisotropy wit ...


3
Belgacem Haba Belgacem (Bel) Haba
Richard Dewitt Crisp, Wael Zohni, Belgacem Haba, Frank Lambrecht: Stub minimization for multi-die wirebond assemblies with orthogonal windows. Invensas Corporation, Lerner David Littenberg Krumholz & Mentlik, August 28, 2012: US08254155 (41 worldwide citation)

A microelectronic assembly can include first and second microelectronic packages mounted to opposed surfaces of a circuit panel. Each package can include a substrate having first, second, and third apertures extending therethrough, first, second, and third microelectronic elements each having a surf ...


4
Bahman Qawami
Chang Robert C, Qawami Bahman, Sabet Sharghi Farshid: Unusable block management within a non-volatile memory system. Sandisk, May 12, 2004: EP1418502-A2 (38 worldwide citation)

Methods and apparatus for tracking defective blocks such that at least some of the defective blocks may be readily identified and tested for usability when desirable are disclosed. According to one aspect of the present invention, a method for identifying spare blocks within a non-volatile memory in ...


5
Ulrich Klostermann
Rainer Leuschner, Ulrich Klostermann: Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module. Qimonda, ALTIS Semiconductor SNC, Slater & Matsil L, April 13, 2010: US07697322 (26 worldwide citation)

Embodiments of the invention relate generally to integrated circuits, to a method for manufacturing an integrated circuit, to a method for decreasing the influence of magnetic fields, and to a memory module. In an embodiment of the invention, an integrated circuit having a magnetic tunnel junction i ...


6
Belgacem Haba Belgacem (Bel) Haba
Richard Dewitt Crisp, Wael Zohni, Belgacem Haba, Frank Lambrecht: Stub minimization using duplicate sets of signal terminals. Invensas Corporation, Lerner David Littenberg Krumholz & Mentlik, March 11, 2014: US08670261 (25 worldwide citation)

A microelectronic structure has active elements defining a storage array, and address inputs for receipt of address information specifying locations within the storage array. The structure has a first surface and can have terminals exposed at the first surface. The terminals may include first termin ...


7
Bahman Qawami
Robert C Chang, Bahman Qawami, Farshid Sabet Sharghi: Method and apparatus for splitting a logical block. SanDisk Corporation, Anderson Levine & Lintel, May 2, 2006: US07039788 (25 worldwide citation)

Methods and apparatus for splitting a single logical block into two or more physical blocks are disclosed. According to one aspect of the present invention, a method for associating a plurality of physical blocks of a non-volatile memory with a logical block that includes of logical block elements i ...


8
Ulrich Klostermann
Stephen L Brown, Arunava Gupta, Ulrich Klostermann, Stuart Stephen Papworth Parkin, Wolfgang Raberg, Mahesh Samant: Magnetic tunnel junctions for MRAM devices. Infineon Technologies, International Business Machines Corporation, Slater & Matsil L, December 12, 2006: US07149105 (18 worldwide citation)

Methods of manufacturing MTJ memory cells and structures thereof. A diffusion barrier is disposed between an anti-ferromagnetic layer and a pinned layer of an MTJ memory cell to improve thermal stability of the MTJ memory cell. The diffusion barrier may comprise an amorphous material or a NiFe alloy ...


9
Bahman Qawami
Chang Robert C, Qawami Bahman, Sabet Sharghi Farshid: Hybrid implementation for error correction codes within a non-volatile memory system. Sandisk, June 2, 2004: EP1424631-A1 (18 worldwide citation)

Methods and apparatus for using different error correction code algorithms to encode and to decode contents of blocks within a non-volatile memory are disclosed. According to one aspect of the present invention, a method for storing data within a non-volatile memory includes identifying a first bloc ...


10
Bahman Qawami
Chang Robert, Qawami Bahman, Sabet Sharghi Farshid: Tracking the most frequently erased blocks in non-volatile storage systems. Sandisk Corporation, Chang Robert, Qawami Bahman, Sabet Sharghi Farshid, SU Peggy A, May 13, 2004: WO/2004/040585 (10 worldwide citation)

Methods and apparatus for performing wear leveling in a non-volatile memory system are disclosed. According to one aspect of the present invention, a method for processing elements included in a non-volatile memory of a memory system includes obtaining erase counts associated with a plurality of era ...



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