Thomas Hamelin, Jay Wallace, Arthur Laflamme Jr: Processing system and method for chemically treating a substrate. Tokyo Electron, Pillsbury Winthrop Shaw Pittman, October 4, 2005: US06951821 (165 worldwide citation)

A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate holder is the ...

Christian M Gronet, James F Gibbons: Rapid thermal heating apparatus and method. Applied Materials, Aldo J Test, October 13, 1992: US05155336 (158 worldwide citation)

A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heati ...

William Bedingham, Raj Rajagopal, Barry W Robole, Kannan Seshadri: Enhanced sample processing devices, systems and methods. 3M Innovative Properties Company, Christopher D Gram, Robert W Sprague, May 11, 2004: US06734401 (156 worldwide citation)

Devices, systems, and methods for processing sample materials. The sample materials may be located in a plurality of process chambers in the device, which is rotated during heating of the sample materials.

Eric Anton Nering: Single-wafer process chamber thermal convection processes. William Michael Hynes, Townsend and Townsend and Crew, September 10, 2002: US06448537 (132 worldwide citation)

A thermal processing chamber configured to enclose and heat treat a single electronic substrate at an exposed surface, such as a wafer or electronic circuit board being re-melted, includes an enclosed gas tight and particle free heat insulated chamber. An electronic substrate support is placed withi ...

Harold Chris Guiver: Vacuum thermal annealer. Steed Technology, Scheneck & Schneck, Thomas Schneck, David M Schneck, August 14, 2007: US07256370 (127 worldwide citation)

A vacuum thermal annealing device is provided having a temperature control for use with various materials, such as semiconductor substrates. A vacuum is used to remove air and outgas residual materials. Heated gas is injected planar to a substrate as pressure is quickly raised. Concurrent with the h ...

Ronald E Sheets: Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.. Tamarack Scientific Co, Gausewitz Carr & Rothenberg, March 10, 1987: US04649261 (114 worldwide citation)

An integrating light pipe, very preferably a kaleidoscope, encloses a source of radiant thermal energy, the light pipe and energy source being so arranged as to achieve efficient and substantially uniform heating of a workpiece in a target plane. The pipe has closed ends so as to heat the workpiece ...

Dennis L Wagner, Harold D Wells: Tunnel oven. Pet Incorporated, Kalish & Gilster, November 19, 1985: US04554437 (110 worldwide citation)

An infrared tunnel oven includes one or more oven tiers each having a horizontal cooking tunnel with entrance and exit at opposite ends, the tier(s) being supported by a base. Each tunnel is divided along its length into multiple heating zones. The roof and hearth surfaces of each tunnel are heated ...

Lawrence W Miller: Fast-fluidized bed reactor for MTO process. UOP, John G Tolomei, Frank S Molinaro, Richard P Silverman, December 26, 2000: US06166282 (108 worldwide citation)

An oxygenate conversion process and fast-fluidized bed reactor are disclosed having an upper disengaging zone and a lower reaction zone. The process is carried out in a reaction zone having a dense phase zone in the lower reaction zone and a transition zone which extends into the disengaging zone. T ...

Jon C Goldman, Robert E Rappaport: Gas control system for chemical vapor deposition system. Thermco Products Corporation, George R Clark, Neil M Rose, Clifford A Dean, January 18, 1983: US04369031 (99 worldwide citation)

A gas flow control system in which several constituent gases are mixed and the mixture delivered through controlled injectors to a processing zone. Mass flow controllers control the injector flows with one of the controllers being a master and the other being slaved to provide a selected percentage ...