1
Fusegawa Izumi, Yamagishi Hirotoshi, Fujimaki Nobuyoshi, Karasawa Yukio: Heat treatment of si single crystal.. Shinetsu Handotai, September 16, 1992: EP0503816-A1 (99 worldwide citation)

The method of this Invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150 DEG C to 1,280 DEG C a wafer cut out of the SI single crystal thereby pro ...


2
Otokawa Takao, Tsuda Nobuhiro, Ushio Satoshi, Takenaka Takao: Process for producing a semiconductor wafer.. Shinetsu Handotai, April 14, 1993: EP0536958-A1 (76 worldwide citation)

A process for producing a semiconductor wafer comprises the steps of pulling up a silicon single crystal rod having a concentration of oxygen in a range of 14-20 ppma at a speed of 0.6 mm/min or lower in a step of growing a silicon single crystal by Czochralski method, providing a silicon single cry ...


3
Curtis E Scott, Jack M Strok, Lionel M Levinson: Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal. General Electric Company, Stanley C Corwin, August 27, 1996: US05549746 (63 worldwide citation)

A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the see ...


4
Robert A Falster, Joseph C Holzer, Steve A Markgraf, Paolo Mutti, Seamus A McQuaid, Bayard K Johnson: Low defect density vacancy dominated silicon. MEMC Electronic Materials, Senniger Powers Leavitt & Roedel, July 6, 1999: US05919302 (39 worldwide citation)

The present invention relates to single crystal silicon, in ingot or wafer form, which contains an axially symmetric region in which vacancies are the predominant intrinsic point defect and which is substantially free of agglomerated vacancy intrinsic point defects, wherein the first axially symmetr ...


5
Graef Dieter Dr, Von Ammon Wilfried Dr, Wahlich Reinhold, Krottenthaler Peter, Lambert Ulrich Dr: Method for producing silicon wafers with a low defect-density. Wacker Siltronic Halbleitermat, March 18, 1998: EP0829559-A1 (37 worldwide citation)

Production of silicon wafers comprises: (a) forming a silicon single crystal having an oxygen doping concentration of 4 x 10/cm, in which a molten material is solidified to a single crystal and cooling for 80 minutes at 850-1100 degrees C; (b) processing the single crystal to silicon wafers; and (c) ...


6
Jason Ronald Jenny, David Phillip Malta, Hudson McDonald Hobgood, Stephan Mueller, Valeri F Tsvetokov: Method for producing semi-insulating resistivity in high purity silicon carbide crystals. Cree, Summa & Allan P A, November 9, 2004: US06814801 (29 worldwide citation)

A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defect related deep level states t ...


7
Shimizu Hirofumi, Fujita Masato, Suzuki Kazuya, Hanagata Fumiaki: A process for fabricating a semiconductor material and an apparatus therefor. Hitachi, October 10, 1984: GB2137524-A (29 worldwide citation)

A silicon single crystal ingot (5) not separated from its seed (5a) is suspended in an upright position within the bell jar (1) of an upright type annealing furnace by clamping the seed (5a) in a chuck (7) on the bell jar (1). The ingot (5) is annealed by radient heat which is emitted from infrared ...


8
Takano Kiyotaka, Kitagawa Kouji, Iino Eiichi, Kimura Masanori, Yamagishi Hirotoshi, Sakurada Masahiro: Silicon single crystal with low defect density and method of producing same. Shinetsu Handotai, December 11, 1996: EP0747513-A2 (24 worldwide citation)

A silicon single crystal having low defects, such as flow pattern defects and laser scattering tomography defects, and high dielectric breakdown strength in oxides and a method of producing the same using the Czochralski technique comprising steps of adjusting a first passage time of a growing cryst ...


9
Vladimir Dribinski, Yung Ho Alex Chuang, J Joseph Armstrong, John Fielden: Laser with high quality, stable output beam, and long life high conversion efficiency non-linear crystal. KLA Tencor Corporation, Bever Hoffman & Harms, Jeanette S Harms, October 28, 2014: US08873596 (23 worldwide citation)

A mode-locked laser system operable at low temperature can include an annealed, frequency-conversion crystal and a housing to maintain an annealed condition of the crystal during standard operation at the low temperature. In one embodiment, the crystal can have an increased length. First beam shapin ...


10
Single crystal shape memory alloy devices and methods. Tini Alloy Company, BACKUS Richard E, November 17, 2005: WO/2005/108635 (20 worldwide citation)

Devices and methods of making devices having one or more components made of single crystal shape memory alloys capable of large recoverable distortions, defined herein as 'hyperelastic' SMA, Recoverable strains are as large as 9 percent, and in special circumstances as large as 22 percent. The alloy ...



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