1
Yamada Korei, Fujii Osamu: Semiconductor device and its producing method. Toshiba, January 11, 2002: JP2002-009081 (99 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor device, and its producing method, in which generation of a defect due to slip is prevented using a high resistance substrate having excellent RF characteristics and the production yield is increased.SOLUTION: Generation of crystal defect, e.g. slip, c ...


2
Fusegawa Izumi, Yamagishi Hirotoshi, Fujimaki Nobuyoshi, Karasawa Yukio: Heat treatment of si single crystal.. Shinetsu Handotai, September 16, 1992: EP0503816-A1 (99 worldwide citation)

The method of this Invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150 DEG C to 1,280 DEG C a wafer cut out of the SI single crystal thereby pro ...


3
Otokawa Takao, Tsuda Nobuhiro, Ushio Satoshi, Takenaka Takao: Process for producing a semiconductor wafer.. Shinetsu Handotai, April 14, 1993: EP0536958-A1 (76 worldwide citation)

A process for producing a semiconductor wafer comprises the steps of pulling up a silicon single crystal rod having a concentration of oxygen in a range of 14-20 ppma at a speed of 0.6 mm/min or lower in a step of growing a silicon single crystal by Czochralski method, providing a silicon single cry ...


4
Takano Kiyotaka, Iino Eiichi, Sakurada Masahiro, Yamagishi Hirotoshi: Method for the preparation of a single crystal of silicon with decreased crystal defects. Shinetsu Handotai, June 12, 1996: EP0716168-A1 (68 worldwide citation)

An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangem ...


5
Batey John, Boland John, Parsons Gregory N: Pulsed gas plasma-enhanced chemical vapor deposition of silicon.. Ibm, February 10, 1993: EP0526779-A1 (58 worldwide citation)

A substrate having silicon receptive surface areas is maintained in a plasma enhanced chemical vapor deposition (PECVD) chamber at a temperature, and under sufficient gas flow, pressure and applied energy conditions to form a gas plasma. The gas plasma is typically made up of hydrogen, but may also ...


6
Witawat Wijaranakula: Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth. SEH America, Loeb & Loeb, March 18, 1997: US05611855 (57 worldwide citation)

A semiconductor silicon wafer (10) useful as a calibration standard for measurement of a thickness (18) of a microdefect-free layer (16) is formed by depositing an epitaxial layer onto a substrate (12) having an interstitial oxygen concentration suitable for precipitating oxide. Large, uniform oxide ...


7
Oda Tetsuhiro, Fusegawa Izumi, Yamagishi Hirotoshi, Iwasaki Atsushi, Maeda Akiho, Takeyasu Shinobu, Fujimaki Nobuyoshi, Karasawa Yukio: Method and apparatus for producing silicon single crystal.. Shinetsu Handotai, September 23, 1992: EP0504837-A2 (56 worldwide citation)

A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield, which comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal (28) having a temperature in excess of 1150 DEG C is spaced upw ...


8
Ichiro Yamashita, Koutaro Shimizu, Yoshiaki Banba, Yasushi Shimanuki, Akira Higuchi, Hisashi Furuya: Method and apparatus for growing silicon crystals. Mitsubishi Kinzoku Kabushiki Kaisha, Japan Silicon, Scully Scott Murphy & Presser, January 1, 1991: US04981549 (52 worldwide citation)

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of betwee ...


9
Iida Makoto, Tamatsuka Masaro, Kimura Masanori, Muraoka Shozo: Nitrogen doped single crystal silicon wafer with few defects and method for its production. Shinetsu Handotai, December 8, 1999: EP0962556-A1 (42 worldwide citation)

There is disclosed a method for producing a silicon single crystal wafer characterized in that a silicon single crystal is grown in accordance with the CZ method with doping nitrogen in an N-region in a defect distribution chart which shows a defect distribution in which the horizontal axis represen ...


10
Suzuki Toshihiko, Kato Yasaburo, Futagami Motonobu: Oxygen containing silicon substrates. Sony, May 13, 1987: GB2182262-A (42 worldwide citation)

A method for producing silicon substrates includes growing the silicon crystal body at a relatively high rate of growth. It has been found that the growth rate of the silicon crystal body exerts substantial influence upon generation of crystal defects in the silicon crystal body or silicon substrate ...



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