1
Yamada Korei, Fujii Osamu: Semiconductor device and its producing method. Toshiba, January 11, 2002: JP2002-009081 (99 worldwide citation)

PROBLEM TO BE SOLVED: To provide a semiconductor device, and its producing method, in which generation of a defect due to slip is prevented using a high resistance substrate having excellent RF characteristics and the production yield is increased.SOLUTION: Generation of crystal defect, e.g. slip, c ...


2
Fusegawa Izumi, Yamagishi Hirotoshi, Fujimaki Nobuyoshi, Karasawa Yukio: Heat treatment of si single crystal.. Shinetsu Handotai, September 16, 1992: EP0503816-A1 (99 worldwide citation)

The method of this Invention for heat treatment of a Si single crystal grown by the Czochralski method at a speed of pull of not less than 0.8 mm/min., characterized by heat-treating at a temperature in the range of from 1,150 DEG C to 1,280 DEG C a wafer cut out of the SI single crystal thereby pro ...


3
Otokawa Takao, Tsuda Nobuhiro, Ushio Satoshi, Takenaka Takao: Process for producing a semiconductor wafer.. Shinetsu Handotai, April 14, 1993: EP0536958-A1 (76 worldwide citation)

A process for producing a semiconductor wafer comprises the steps of pulling up a silicon single crystal rod having a concentration of oxygen in a range of 14-20 ppma at a speed of 0.6 mm/min or lower in a step of growing a silicon single crystal by Czochralski method, providing a silicon single cry ...


4
Takano Kiyotaka, Iino Eiichi, Sakurada Masahiro, Yamagishi Hirotoshi: Method for the preparation of a single crystal of silicon with decreased crystal defects. Shinetsu Handotai, June 12, 1996: EP0716168-A1 (68 worldwide citation)

An improvement is proposed in the single crystal growing process of semiconductor silicon in the Czochralski process to obtain a silicon single crystal having a greatly decreased number of crystal defects without affecting the productivity. The improvement can be accomplished by an adequate arrangem ...


5
Batey John, Boland John, Parsons Gregory N: Pulsed gas plasma-enhanced chemical vapor deposition of silicon.. Ibm, February 10, 1993: EP0526779-A1 (59 worldwide citation)

A substrate having silicon receptive surface areas is maintained in a plasma enhanced chemical vapor deposition (PECVD) chamber at a temperature, and under sufficient gas flow, pressure and applied energy conditions to form a gas plasma. The gas plasma is typically made up of hydrogen, but may also ...


6
Witawat Wijaranakula: Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth. SEH America, Loeb & Loeb, March 18, 1997: US05611855 (58 worldwide citation)

A semiconductor silicon wafer (10) useful as a calibration standard for measurement of a thickness (18) of a microdefect-free layer (16) is formed by depositing an epitaxial layer onto a substrate (12) having an interstitial oxygen concentration suitable for precipitating oxide. Large, uniform oxide ...


7
Oda Tetsuhiro, Fusegawa Izumi, Yamagishi Hirotoshi, Iwasaki Atsushi, Maeda Akiho, Takeyasu Shinobu, Fujimaki Nobuyoshi, Karasawa Yukio: Method and apparatus for producing silicon single crystal.. Shinetsu Handotai, September 23, 1992: EP0504837-A2 (56 worldwide citation)

A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield, which comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal (28) having a temperature in excess of 1150 DEG C is spaced upw ...


8
Ichiro Yamashita, Koutaro Shimizu, Yoshiaki Banba, Yasushi Shimanuki, Akira Higuchi, Hisashi Furuya: Method and apparatus for growing silicon crystals. Mitsubishi Kinzoku Kabushiki Kaisha, Japan Silicon, Scully Scott Murphy & Presser, January 1, 1991: US04981549 (52 worldwide citation)

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of betwee ...


9
Dieter Graef, Wilfried Von Ammon, Reinhold Wahlich, Peter Krottenthaler, Ulrich Lambert: Process for producing silicon semiconductor wafers with low defect density. Wacker Siltronic Gesellschaft fur Halbleitermaterialien, Collard & Roe P C, August 10, 1999: US05935320 (44 worldwide citation)

A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the s ...


10
Herbert Klingshirn, Reinhard Lang: Continuous liquid silicon recharging process in Czochralski crucible pulling. Wacker Chemitronic Gesellschaft fur Elektronik Grundstoffe m b H, Collard & Roe, September 7, 1993: US05242531 (43 worldwide citation)

In the Czochralski crucible pulling of crystal ingots, in particular those of silicon and having particularly large crystal diameters, the degree of filling of the crucible is kept approximately constant during the pulling process by continuously adding solid or liquid recharging material. According ...