1
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Egbert Woelk: Organometallic compounds. Rohm and Haas Electronic Materials, S Matthew Cairns, June 24, 2008: US07390360 (4 worldwide citation)

Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.


2
Nathaniel Brese
Nathaniel E Brese, Jitendra S Goela, Michael A Pickering: Silicon carbide with high thermal conductivity. Rohm and Haas Electronic Materials, Edwards & Angell, January 6, 2005: US20050000412-A1

A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carb ...


3
Matthias Bauer
Matthias Bauer, Keith Doran Weeks, Pierre Tomasini, Nyles Cody: Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition. ASM America, Knobbe Martens Olson & Bear, October 21, 2008: US07438760 (21 worldwide citation)

Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 at ...


4
Eugene Fitzgerald
Eugene A Fitzgerald, Richard Westhoff, Matthew T Currie, Christopher J Vineis, Thomas A Langdo: Method of Producing High Quality Relaxed Silicon Germanium Layers. Taiwan Semiconductor Manufacturing Company, Slater & Matsil, August 19, 2010: US20100206216-A1

A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, a ...


5
Matthias Bauer
Paul D Brabant, Joseph P Italiano, Chantal J Arena, Pierre Tomasini, Ivo Raaijmakers, Matthias Bauer: Epitaxial semiconductor deposition methods and structures. Knobbe Martens Olson & Bear, May 5, 2005: US20050092235-A1

Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retr ...


6
Eugene Fitzgerald
Kenneth C Wu, Eugene A Fitzgerald, Gianni Taraschi, Jeffrey T Borenstein: Etch stop layer system. Massachusetts Institute of Technology, Testa Hurwitz & Thibeault, January 1, 2004: US20040000268-A1

A SiGe monocrystalline etch-stop material system on a monocrystalline silicon substrate. The etch-stop material system can vary in exact composition, but is a doped or undoped Si1-xGex alloy with x generally between 0.2 and 0.5. Across its thickness, the etch-stop material itself is uniform in compo ...


7
Eugene Fitzgerald
Eugene A Fitzgerald, Richard Westhoff, Matthew T Currie, Christopher J Vineis, Thomas A Langdo: Method of producing high quality relaxed silicon germanium layers. Testa Hurwitz & Thibeault, December 18, 2003: US20030230233-A1

A method for minimizing particle generation during deposition of a graded Si1xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositi ...


8
Eugene Fitzgerald
Andrew Y Kim, Eugene A Fitzgerald: Method of producing device quality (Al)InGaP alloys on lattice-mismatched substrates. Samuels Gauthier & Stevens, October 10, 2002: US20020144645-A1

A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1y)1xP alloy layers. The buffer includes a first alloy layer immediately contacting ...


9
Eugene Fitzgerald
Mayank Bulsara, Eugene A Fitzgerald: Relaxed InxGa1-xAs layers integrated with Si. Matthew E Connors Esq, Samuels Gauthier & Stevens, September 19, 2002: US20020129762-A1

A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of InxGa1xAs at a temperature ranging upwards from about 600° C. with a subse ...


10
Charles M Lieber, Peidong Yang: Metal oxide nanorods. President and Fellows of Harvard College, Fish & Richardson P C, April 27, 1999: US05897945 (270 worldwide citation)

Metal oxide nanorods and composite materials containing such nanorods. The metal oxide nanorods have diameters between 1 and 200 nm and aspect ratios between 5 and 2000.