41
Chiu H Ting, William H Holtkamp, Wen C Ko, Kenneth J Lowery, Peter Cho: Process chamber and method for depositing and/or removing material on a substrate. Cutek Research, Blakely Sokoloff Taylor and Zafman, January 25, 2000: US06017437 (59 worldwide citation)

A processing chamber for depositing and/or removing material onto/from a semiconductor wafer when the wafer is subjected to an electrolyte and in an electric field. A hollow sleeve is utilized to form a containment chamber for holding the electrolyte. A wafer residing on a support is moved verticall ...


42
Kiyoshi Inoue: Electrochemical polishing method. Inoue Japax Research Incorporated, Karl F Ross, November 14, 1978: US04125444 (58 worldwide citation)

A method of electrochemically polishing a metal body which comprises juxtaposing the surface to be polished with a tool electrode in the presence of an abrasive and an electrolyte, and applying pulses having a duration not exceeding 100 microseconds between the electrode and the workpiece with the e ...


43
Pogge H Bernhard, Poponiak Michael R: Method of fabricating semiconductor device embodying dielectric isolation. International Business Machines Corporation, Stoffel Wolmar J, November 11, 1975: US3919060 (57 worldwide citation)

A semiconductor fabrication method for producing dielectrically isolated silicon regions wherein high conductivity regions surrounding device regions to be electrically isolated are produced in a silicon body, the high conductivity regions anodically etched in a solution to selectively produce regio ...


44
Kazuhiro Ando, Takamasa Kawakami, Yasuhiro Shouji, Yasuo Tanaka, Takeo Kanaoka, Norio Sayama: Process for producing copper clad laminate. Mitsubishi Gas Chemical Company, Sughrue Mion Zinn Macpeak & Seas, January 17, 1995: US05382333 (55 worldwide citation)

A process for producing a copper-clad laminate using a copper foil obtained by subjecting the surface of the copper foil to chemical oxidation thereby to form, on the surface, a fine roughness constituted by a copper oxide of a brown to black color and then reducing the copper oxide constituting the ...


45
Jacob Richter: Stent fabrication method and apparatus. Medinol, Kenyon & Kenyon, October 9, 2001: US06299755 (54 worldwide citation)

A method is provided for electropolishing a stent. A stent is mounted on a rack having electropolishing mounts. Each of the mounts has a base and an electrically conductive first member having a first end and a second end. The first end is connected to the base and the second end contacts the extern ...


46
Ming Hsun Hsieh, Chung Shu Chang: Workpiece holder apparatus. Industrial Technology Research Institute, W Wayne Liauh, April 11, 1995: US05405518 (54 worldwide citation)

A high-temperature electrochemical etching apparatus containing a workpiece holder, which contains a first base plate and a second base plate to be joined together by screws, the first base plate having a recess on the front face thereof for receiving and retaining the workpiece, and both the first ...


47
Shakir A Abbas, Robert C Dockerty, Michael R Poponiak: Process for forming apertures in silicon bodies. International Business Machines Corporation, Wolmar J Stoffel, June 8, 1976: US03962052 (54 worldwide citation)

A process for forming holes with precisely controlled dimension and position in monocrystalline silicon wafers wherein the holes are fabricated with vertical sides. In the preferred process, both sides of the silicon body are masked, opposite registered openings made in the masking layers, an impuri ...


48
Philip E Mauger: Method for forming a silicon membrane with controlled stress. Nanostructures, Blakely Sokoloff Taylor & Zafman, October 30, 1990: US04966663 (53 worldwide citation)

A method for fabricating a silicon membrane with predetermined stress characteristics. A silicon substrate is doped to create a doped layer as thick as the desired thickness of the membrane. Stress within the doped layer is controlled by selecting the dopant based on its atomic diameter relative to ...


49
Gelchinski Mordechai Hirsh, Romankiw Lubomyr Taras, Vigliotti Donald Richard, Von Gutfeld Robert Jacob: Additive or subtractive chemical process.. Ibm, December 19, 1984: EP0128401-A2 (51 worldwide citation)

An intense laser beam is focused at a jet nozzle through which an electrolyte is directed towards a substrate, so that the laser beam travels with the jet to the substrate. The laser beam heats the site of the substrate on which it falls, and thereby enhances the etching or plating process being car ...


50
Peter P Pellegrino: Apparatus for electroplating, deplating or etching. Blakely Sokoloff Taylor & Zafman, November 13, 1979: US04174261 (50 worldwide citation)

Methods and apparatus for providing high and uniform processing rates for electroplating, deplating, etching and the like, substantially independent of the surface geometries of the article subjected to the process. In an electroplating application, the article to be plated is supported on a cathode ...