Dr. Jill S. Becker
Douwe J Monsma, Jill S Becker: Vapor deposition systems and methods. Cambridge NanoTech, The Marbury Law Group PLLC, June 19, 2012: US08202575 (8 worldwide citation)

Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta V, Manzik Stephen J: Precursor composition and method. Rohm &Amp Haas Electronic Materials, April 16, 2009: JP2009-079290 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a precursor composition and a method therefor relating generally to the field of vapor deposition precursor compositions and their use in vapor deposition of thin films.SOLUTION: Compositions containing an amido-group-containing vapor deposition precursor and a stabi ...

Deodatta Shenai-Khatkhate
Qing Min Wang, Deodatta Vinayak Shenai Khatkhate, Huazhi Ll: Organometallic compounds. Rohm and Haas Electronic Materials, March 17, 2011: US20110064879-A1

Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.

Dr. Jill S. Becker
Roger R Coutu, Jill S Becker, Douwe J Monsma: Reaction chamber with removable liner. Cambridge NanoTech, Wolf Greenfield & Sacks PC, September 30, 2010: US20100247763-A1

A reaction chamber assembly for thin film deposition processes or the like includes an outer wall assembly for enclosing an outer volume and a removable liner installed into the outer volume through an outer aperture for preventing precursors or reactants from coming into contact with internal surfa ...

Cynthia Hoover
Demetrius Sarigiannis, Cynthia A Hoover, Michael Joseph Krause, Edward Pryor, Stephen Chesters, Ronald Spohn: Multiple ampoule delivery systems. Praxair, Law Department M1 557, August 27, 2009: US20090214779-A1

This invention relates to an integrated vapor or liquid phase reagent dispensing apparatus having a plurality of vessels and a plurality of carrier or inert gas feed/vapor or liquid phase reagent delivery manifolds, that may be used for continuously dispensing vapor or liquid phase reagents such as ...

Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Intellectual Property Technology Law, May 28, 2009: US20090136668-A1

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may compr ...

Deodatta Shenai-Khatkhate
Shenai Khatkhate Deodatta Vinayak, Timmons Michael L, Marsman Charles R, Woelk Egbert, Dicarlo Jr Ronald L: Vapor phase delivery device for solid precursor compound comprising an exit chamber and an entrance chamber including a precursor composition. Rohm And Haas Electronic Materials, June 13, 2006: KR1020050120197

PURPOSE: Devices for delivering a solid precursor compound in the vapor phase to a reactor, which include a precursor composition of the solid precursor compound with a packing material layer disposed thereon, are provided, and methods for transferring a carrier gas saturated with the precursor comp ...

Sang Bom Kang, Sang In Lee: Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device. Samsung Electronics, Jones Volentine, October 31, 2000: US06139700 (258 worldwide citation)

A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic conta ...

Kim Yeong Kwan, Park Young Wook, Choi Sung Je, Lee Sang In, Lim Jae Soon: Atomic layer deposition method. Samsung Electronics, May 2, 2001: GB2355727-A (178 worldwide citation)

In a method of forming a thin film using an atomic layer deposition (ALD) method, a thin film is formed on a substrate in a cycle of injecting a first reactant including an atom that forms the thin film and a ligand into a reaction chamber that includes the substrate, purging the first reactant, inj ...

Fred Pettinger, Carl White, Dave Marquardt, Sokol Ibrani, Eric Shero, Todd Dunn, Kyle Fondurulia, Mike Halpin: Process feed management for semiconductor substrate processing. ASM America, Snell & Wilmer, April 28, 2015: US09017481 (149 worldwide citation)

Embodiments related to managing the process feed conditions for a semiconductor process module are provided. In one example, a gas channel plate for a semiconductor process module is provided. The example gas channel plate includes a heat exchange surface including a plurality of heat exchange struc ...