1
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, November 27, 2007: US07300038 (36 worldwide citation)

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the stru ...


2
Ana Londergan
Gi Youl Kim, Anuranjan Srivastava, Thomas E Seidel, Ana R Londergan, Sasangan Ramanathan: Transient enhanced atomic layer deposition. Aixtron, SNR Denton US, July 19, 2011: US07981473 (35 worldwide citation)

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uni ...


3
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Michael L Timmons, Charles J Marsman, Egbert Woelk, Ronald L DiCarlo Jr: Delivery device. Rohm and Haas Electronic Materials, S Matthew Cairns, May 25, 2010: US07722720 (11 worldwide citation)

Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with ...


4
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi K Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, February 10, 2009: US07487956 (11 worldwide citation)

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may inclu ...


5
Dr. Jill S. Becker
Roy G Gordon, Jill S Becker, Dennis Hausmann, Seigi Suh: Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide. President and Fellows of Harvard College, Wilmer Cutler Pickering Hale & Dorr, March 24, 2009: US07507848 (9 worldwide citation)

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit ha ...


6
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronic Materials, S Matthew Cairns, June 16, 2009: US07547631 (4 worldwide citation)

Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


7
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Qing Min Wang: Organometallic compounds. Rohm and Haas Electronics Materials, S Matthew Cairns, May 12, 2009: US07531458 (2 worldwide citation)

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.


8
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low-K dielectric thin films and chemical vapor deposition method of making same. Margaret Chappuis, ATMI, April 3, 2003: US20030064154-A1 (2 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...


9
Cynthia Hoover
Delong Zhang, Cynthia Hoover: Organometallic precursor compounds. Praxair Technology, Iurie A Schwartz, May 25, 2010: US07723535 (1 worldwide citation)

This invention relates to organometallic precursor compounds represented by the formula i-PrN═Ta(NR1R2)3 wherein R1 and R2 are the same or different and are alkyl having from 1 to 3 carbon atoms, provided that (i) when R1 is ethyl, then R2 is other than ethyl and (ii) when R2 is ethyl, then R1 is ot ...


10
Ravi Laxman
Ravi K Laxman, Chongying Xu, Thomas H Baum: Low dielectric constant thin films and chemical vapor deposition method of making same. Oliver A Zitzmann, ATMI, November 21, 2002: US20020172766-A1 (1 worldwide citation)

A CVD process for producing low-dielectric constant, SiOC thin films using organosilicon precursor compositions having at least one alkyl group and at least one cleavable organic functional group that when activated rearranges and cleaves as a highly volatile liquid or gaseous by-product. In a first ...