1
Nathaniel Brese Angelo Lamola
Angelo A Lamola, Nathaniel E Brese: Electronic device manufacture. Rohm and Haas Electronic Materials, S Matthew Cairns, May 9, 2006: US07041331

Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.


2
Dr. Jill S. Becker
Roy G Gordon, Jill Becker, Dennis Hausmann, Seigi Suh: Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide. President and Fellows of Harvard College, Wilmer Cutler Pickering Hale and Dorr, November 29, 2005: US06969539 (45 worldwide citation)

Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit ha ...


3
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, November 27, 2007: US07300038 (35 worldwide citation)

Structure helps support material in a container with an increased exposed surface area to help promote contact of a gas with vaporized material. For at least one disclosed embodiment, the structure may help support material for vaporization in the same form as when the material is placed at the stru ...


4
Ana Londergan
Ana R Londergan, Thomas E Seidel, Lawrence D Matthysse, Ed C Lee: Method and apparatus for flexible atomic layer deposition. Genus, Blakley Sokoloff Taylor & Zafman, June 14, 2005: US06905547 (35 worldwide citation)

An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier ...


5
Ravi Laxman
Ravi Kumar Laxman, Arthur Kenneth Hochberg: Low temperature deposition of silicon dioxide using organosilanes. Air Products and Chemicals, Geoffrey L Chase, April 28, 1998: US05744196 (24 worldwide citation)

The present invention is a process for very low temperature chemical vapor deposition of silicon dioxide, comprising the steps of


6
Ravi Laxman
Ziyun Wang, Chongying Xu, Ravi K Laxman, Thomas H Baum, Bryan Hendrix, Jeffrey Roeder: Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride. Advanced Technology Materials, Steven J Hultquist, Intellectual Property Technology Law, Maggie Chappuis, May 12, 2009: US07531679 (23 worldwide citation)

Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si3N4), siliconoxynitride (SiOxNy) and/or silicon ...


7
Ana Londergan
Gi Youl Kim, Anuranjan Srivastava, Thomas E Seidel, Ana R Londergan, Sasangan Ramanathan: Transient enhanced atomic layer deposition. Aixtron, SNR Denton US, July 19, 2011: US07981473 (20 worldwide citation)

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uni ...


8
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Michael L Timmons, Charles J Marsman, Egbert Woelk, Ronald L DiCarlo Jr: Delivery device. Rohm and Haas Electronic Materials, S Matthew Cairns, May 25, 2010: US07722720 (11 worldwide citation)

Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with ...


9
Ravi Laxman
John N Gregg, Scott L Battle, Jeffrey I Banton, Donn K Naito, Ravi K Laxman: Method and apparatus to help promote contact of gas with vaporized material. Advanced Technology Materials, Vincent K Gustafson, Intellectual Property Technology Law, Maggie Chappuis, February 10, 2009: US07487956 (11 worldwide citation)

Vaporizable material is supported within a vessel to promote contact of an introduced gas with the vaporizable material, and produce a product gas including vaporized material. A heating element supplies heat to a wall of the vessel to heat vaporizable material disposed therein. The vessel may inclu ...


10
Deodatta Shenai-Khatkhate
Deodatta Vinayak Shenai Khatkhate, Michael Brendan Power: Method of depositing a metal-containing film. Rohm and Haas Electronic Materials, S Matthew Cairns, August 19, 2008: US07413776 (10 worldwide citation)

A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group I ...



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