1
Zhijun Chen, Zihui Li, Anchuan Wang, Nitin K Ingle, Shankar Venkataraman: Selective etch of silicon nitride. Applied Materials, Kilpatrick Townsend & Stockton, February 17, 2015: US08956980 (107 worldwide citation)

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region ...


2
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023732 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


3
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, July 28, 2015: US09093371 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


4
Xikun Wang, Ching Mei Hsu, Nitin K Ingle, Zihui Li, Anchuan Wang: Dry-etch for selective tungsten removal. Applied Materials, Kilpatrick Townsend & Stockton, March 17, 2015: US08980763 (85 worldwide citation)

Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma efflu ...


5
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, October 6, 2015: US09153442 (84 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


6
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, November 10, 2015: US09184055 (82 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


7
Zhijun Chen, Zihui Li, Anchuan Wang, Nitin K Ingle, Shankar Venkataraman: Selective etch of silicon nitride. Applied Materials, Kilpatrick Townsend & Stockton, December 8, 2015: US09209012 (75 worldwide citation)

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region ...


8
Xikun Wang, Ching Mei Hsu, Nitin K Ingle, Zihui Li, Anchuan Wang: Dry-etch for selective tungsten removal. Applied Materials, Kilpatrick Townsend & Stockton, August 9, 2016: US09412608 (39 worldwide citation)

Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma efflu ...


9
Zhijun Chen, Zihui Li, Nitin K Ingle, Anchuan Wang, Shankar Venkataraman: Highly selective doped oxide removal method. Applied Materials, Kilpatrick Townsend & Stockton, August 2, 2016: US09406523 (38 worldwide citation)

A method of etching doped silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using partial remote plasma excitation. The remote plasma excites a fluorine-containing precursor and the plasma effluents created are flowed into a substrate processing region. A ...


10
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, September 20, 2016: US09449850 (38 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...