1
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Jeffrey P Gambino, Zhong Xiang He, Vidhya Ramachandran: Metal-insulator-metal capacitor and method of fabrication. International Business Machines Corporation, Schmeiser Olsen & Watts, William D Sabo, April 5, 2005: US06876028 (15 worldwide citation)

A method and structure for a MIM capacitor, the structure including: an electronic device, comprising: an interlevel dielectric layer formed on a semiconductor substrate; a copper bottom electrode formed in the interlevel dielectric layer, a top surface of the bottom electrode co-planer with a top s ...


2
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, April 22, 2008: US07361993 (11 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...


3
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, Jeffrey B Johnson, Jonghae Kim, Jean Oliver Plouchart, Anthony K Stamper: Passive components in the back end of integrated circuits. International Business Machines Corporation, Anthony J Canale, August 3, 2010: US07768055 (10 worldwide citation)

Passive components are formed in the back end by using the same deposition process and materials as in the rest of the back end. Resistors are formed by connecting in series individual structures on the nth, (n+1)th, etc levels of the back end. Capacitors are formed by constructing a set of vertical ...


4
Eb Eshun
Anil Kumar Chinthakindi, Douglas Duane Coolbaugh, Keith Edward Downes, Ebenezer E Eshun, Zhong Xiang He, Robert Mark Rassel, Anthony Kendall Stamper, Kunal Vaed: Integration of a MIM capacitor with a plate formed in a well region and with a high-k dielectric. International Business Machines Corporation, H Daniel Schnurmann, Graham S Jones II, April 22, 2008: US07361950 (10 worldwide citation)

A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower ...


5
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Ephrem G Gebreselasie, Zhong Xiang He, Herbert Lei Ho, Deok kee Kim, Chandrasekharan Kothandaraman, Dan Moy, Robert Mark Rassel, John Matthew Safran, Kenneth Jay Stein, Norman Whitelaw Robson, Ping Chuan Wang, Hongwen Yan: Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Yuanmin Cai, April 17, 2012: US08159040 (7 worldwide citation)

A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed at least in ...


6
Eb Eshun
Douglas D Coolbaugh, Hanyi Ding, Ebenezer E Eshun, Michael D Gordon, Zhong Xiang He, Anthony K Stamper: Integrated parallel plate capacitors. International Business Machines Corporation, Anthony J Canale, January 12, 2010: US07645675 (6 worldwide citation)

A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the interlevel dielec ...


7
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Zhong Xiang He, William J Murphy, Vidhya Ramachandran: Inexpensive method of fabricating a higher performance capacitance density MIMcap integrable into a copper interconnect scheme. International Business Machines Corporation, Scully Scott Murphy & Presser P C, Anthony J Canale, October 16, 2007: US07282404 (6 worldwide citation)

A method to integrate MIM capacitors into conductive interconnect levels, with low cost impact, and high yield, reliability and performance than existing integration methods is provided. This is accomplished by recessing a prior level dielectric for MIM capacitor level alignment followed by depositi ...


8
Eb Eshun
Anil K Chinthakindi, Douglas D Coolbaugh, John M Cotte, Ebenezer E Eshun, Zhong Xiang He, Anthony K Stamper, Eric J White: Integrated BEOL thin film resistor. International Business Machines Corporation, Anthony J Canale, March 8, 2011: US07902629 (5 worldwide citation)

In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close in height to the ...


9
Eb Eshun
Douglas D Coolbaugh, Ebenezer E Eshun, Natalie B Feilchenfeld, Michael L Gautsch, Zhong Xiang He, Matthew D Moon, Vidhya Ramachandran, Barbara Waterhouse: Formation of metal-insulator-metal capacitor simultaneously with aluminum metal wiring level using a hardmask. International Business Machines Corporation, Gibb & Rahman, Anthony J Canale, November 27, 2007: US07301752 (5 worldwide citation)

Disclosed is a method of fabricating a metal-insulator-metal (MIM) capacitor. In this method, a dielectric layer is formed above a lower conductor layer and an upper conductor layer is formed above the dielectric layer. The invention then forms an etch stop layer above the upper conductor layer and ...


10
Eb Eshun
Douglas D Coolbaugh, Daniel C Edelstein, Ebenezer E Eshun, Zhong Xiang He, Robert M Rassel, Anthony K Stamper: Terminal pad structures and methods of fabricating same. International Business Machines Corporation, Schmeiser Olsen & Watts, Steven Capella, February 24, 2009: US07494912 (5 worldwide citation)

Terminal pads and methods of fabricating terminal pads. The methods including forming a conductive diffusion barrier under a conductive pad in or overlapped by a passivation layer comprised of multiple dielectric layers including diffusion barrier layers. The methods including forming the terminal p ...