1
Zhijun Chen, Zihui Li, Anchuan Wang, Nitin K Ingle, Shankar Venkataraman: Selective etch of silicon nitride. Applied Materials, Kilpatrick Townsend & Stockton, February 17, 2015: US08956980 (107 worldwide citation)

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region ...


2
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023732 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


3
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, July 28, 2015: US09093371 (85 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


4
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, October 6, 2015: US09153442 (84 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


5
Zhijun Chen, Jingchun Zhang, Ching Mei Hsu, Seung Park, Anchuan Wang, Nitin K Ingle: Radical-component oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, May 5, 2015: US09023734 (84 worldwide citation)

A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a ...


6
Jie Liu, Jingchun Zhang, Anchuan Wang, Nitin K Ingle, Seung Park, Zhijun Chen, Ching Mei Hsu: Selective titanium nitride etching. Applied Materials, Kilpatrick Townsend & Stockton, December 30, 2014: US08921234 (83 worldwide citation)

Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into ...


7
Zhijun Chen, Seung Park, Mikhail Korolik, Anchuan Wang, Nitin K Ingle: Non-local plasma oxide etch. Applied Materials, Kilpatrick Townsend & Stockton, August 18, 2015: US09111877 (83 worldwide citation)

A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitro ...


8
Anchuan Wang, Xinglong Chen, Zihui Li, Hiroshi Hamana, Zhijun Chen, Ching Mei Hsu, Jiayin Huang, Nitin K Ingle, Dmitry Lubomirsky, Shankar Venkataraman, Randhir Thakur: Processing systems and methods for halide scavenging. Applied Materials, Kilpatrick Townsend & Stockton, November 10, 2015: US09184055 (82 worldwide citation)

Systems, chambers, and processes are provided for controlling process defects caused by moisture contamination. The systems may provide configurations for chambers to perform multiple operations in a vacuum or controlled environment. The chambers may include configurations to provide additional proc ...


9
Zhijun Chen, Zihui Li, Anchuan Wang, Nitin K Ingle, Shankar Venkataraman: Selective etch of silicon nitride. Applied Materials, Kilpatrick Townsend & Stockton, December 8, 2015: US09209012 (75 worldwide citation)

A method of etching silicon nitride on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a nitrogen-and-oxygen-containing precursor. Plasma effluents from two remote plasmas are flowed into a substrate processing region ...


10
Lin Xu, Zhijun Chen, Anchuan Wang, Son T Nguyen: Oxide etch selectivity systems and methods. Applied Materials, Kilpatrick Townsend & Stockton, May 24, 2016: US09349605 (51 worldwide citation)

Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow ...