1
Shyam Venkataraman
Yuzhuo Li, Harvey Wayne Pinder, Shyam S Venkataraman: Chemical mechanical polishing (CMP) polishing solution with enhanced performance. BASF SE, Oblon Spivak McClelland Maier & Neustadt L, December 3, 2013: US08597539

This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the li ...


2
Shyam Venkataraman
Yuzhuo Li, Harvey Wayne Pinder, Shyam S Venkataraman: Chemical mechanical polishing (cmp) polishing solution with enhanced performance. Basf Se, November 3, 2011: US20110269312-A1

This invention relates to a chemical composition for chemical mechanical polishing (CMP) of substrates that are widely used in the semiconductor industry. The inventive chemical composition contains additives that are capable of improving consistency of the polishing performance and extending the li ...


3
Shyam Venkataraman
Michael Lauter, Vijay Immanuel Raman, Yuzhuo Li, Shyam Sundar Venkataraman, Daniel Kwo Hung Shen: Chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles. Basf Se, August 16, 2012: US20120208344-A1

A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the ino ...


4
Yuzhuo Li, David Bruce Cerutti, Donald Joseph Buckley Jr, Earl Royce Tyre Jr, Jason J Keleher, Richard J Uriarte, Ferenc Horkay: Diamond slurry for chemical-mechanical planarization of semiconductor wafers. General Electric Company, Mueller and Smith LPA, July 10, 2001: US06258721 (39 worldwide citation)

The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of a chelating agent, ( ...


5
Yuzhuo Li, Guomin Bian, Kwok Tang, Joe Zunzi Zhao, John Westbrook, Yong Lin, Leina Chan: Abrasive composition containing organic particles for chemical mechanical planarization. Dynea Canada, Birch Stewart Kolasch & Birch, September 16, 2003: US06620215 (34 worldwide citation)

The present invention is drawn to a composition comprising abrasive particles comprising an organic resin for chemical mechanical planarization (CMP), which can be widely used in the semiconductor industry. The abrasive composition is an aqueous slurry comprising abrasive particles comprising an org ...


6
Stuart D Hellring, Colin P McCann, Charles F Kahle, Yuzhuo Li, Jason Keleher: Silica-based slurry. PPG Industries Ohio, Carol A Marmo, December 2, 2003: US06656241 (26 worldwide citation)

This invention relates to a slurry composition and a method of its preparation. In particular, the slurry composition of the present invention includes a silica wherein the silica comprises a surface modification. The silica-based slurry of the present invention is suitable for polishing articles an ...


7
Yuzhuo Li, Kwok Tang, Wu Li, Guomin Bian, Krishnayya Cheemalapati, Vivek Duvvuru, Deenesh Bundi, Henry Bian: Engineered non-polymeric organic particles for chemical mechanical planarization. Dynea Chemicals Oy, Birch Stewart Kolasch & Birch, September 2, 2008: US07419519 (19 worldwide citation)

An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least o ...


8
Yuzhuo Li, Atanu Roy Chowdhury, Kwok Tang, Guomin Bian, Krishnayya Cheemalapati: Non-polymeric organic particles for chemical mechanical planarization. Dynea Chemicals Oy, Birch Stewart Kolasch & Birch, May 2, 2006: US07037351 (14 worldwide citation)

An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001–20 w/w % of non-polymeric org ...


9
Stuart D Hellring, Colin P McCann, Suryadevara V Babu, Yuzhuo Li, Satish Narayanan, Robert L Auger: Silica and silica-based slurry. PPG Industries Ohio, Deborah M Altman, Carol A Marmo, October 9, 2007: US07279119 (8 worldwide citation)

This invention relates to a silica, a slurry composition, and a method of their preparation. In particular, the silica of the present invention includes aggregated primary particles. The slurry composition which incorporates the silica, is suitable for polishing articles and especially useful for ch ...


10
Yuzhuo Li, David Bruce Cerutti, Donald Joseph Buckley Jr, Earl Royce Tyre Jr, Jason J Keleher, Richard J Uriarte, Ferenc Horkay: Diamond slurry for chemical-mechanical planarization of semiconductor wafers. General Electric Company, Mueller and Smith LPA, June 5, 2001: US06242351 (8 worldwide citation)

The multistage process for the chemical-mechanical planarization (CMP) of Cu commences with forming a primary aqueous or non-aqueous (e.g., using alcohols and ketones as non-aqueous carriers) slurry from (i) between about 0 and 7 wt-% of an oxidizer, (ii) between 0 and 7 wt-% of one or more of a com ...