1
Shuji Ikeda, Satoshi Meguro, Soichiro Hashiba, Isamu Kuramoto, Atsuyoshi Koike, Katsuro Sasaki, Koichiro Ishibashi, Toshiaki Yamanaka, Naotaka Hashimoto, Nobuyuki Moriwaki, Shigeru Takahashi, Atsushi Hiraishi, Yutaka Kobayashi, Seigou Yukutake: SRAM having load transistor formed above driver transistor. Hitachi, Antonelli Terry Stout & Kraus, November 10, 1998: US05834851 (162 worldwide citation)

Herein disclosed is a semiconductor integrated circuit device comprising a SRAM having its memory cell composed of transfer MISFETs to be controlled through word lines and drive MISFETs. The gate electrodes of the drive MISFETs and the gate electrodes of the transfer MISFETs of the memory cell, and ...


2
Yutaka Kobayashi, Takaya Suzuki: Semiconductor devices and method for making the same. Hitachi, Antonelli Terry Stout & Kraus, November 6, 1990: US04969031 (136 worldwide citation)

A semiconductor device has an active layer in which a semiconductor element is formed by employing a silicon single crystal as a substrate. The present invention causes a tensile strain to remain in the active layer, thereby to improve the carrier mobility.


3
Yoshiaki Yazawa, Yutaka Kobayashi, Akira Fukami, Takahiro Nagano: MOSFET with reduced short channel effect. Hitachi, Antonelli Terry & Wands, April 4, 1989: US04819043 (133 worldwide citation)

An MOSFET provided with a gate insulating film formed on a semiconductor surface between a source region and a drain region, a gate electrode formed on the gate insulating film, and a channel region sandwiched between the source region and the drain region and made up of a first layer and a second l ...


4
Minoru Ozaki, Kyosuke Yoshimoto, Hiroyuki Onda, Koji Yamana, Takuya Nagata, Hidehiko Murata, Yutaka Kobayashi: Method for rewriting defect management areas on optical disk according to ECMA standard. Mitsubishi Electric Corporation, Teac Corporation, Andrus Sceales Starke & Sawall, June 7, 1994: US05319626 (109 worldwide citation)

A method for rewriting four defect management areas on an optical disk according to an ECMA standard is performed by means of deleting an old data which has been recorded on the respective defect management areas and then sequentially writing down a new data on respective defect management areas.


5
Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma: Semiconductor CMOS memory device with separately biased wells. Hitachi, Antonelli Terry Stout & Kraus, January 31, 1995: US05386135 (45 worldwide citation)

Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for exam ...


6

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Jun Murata, Yoshitaka Tadaki, Hiroko Kaneko, Toshihiro Sekiguchi, Hiroyuki Uchiyama, Hisashi Nakamura, Toshio Maeda, Osamu Kasahara, Hiromichi Enami, Atsushi Ogishima, Masaki Nagao, Michimasa Funabashi, Yasuo Kiguchi, Masayuki Kojima, Atsuyoshi Koike, Hiroyuki Miyazawa, Masato Sadaoka, Kazuya Kadota, Tadashi Chikahara, Kazuo Nojiri, Yutaka Kobayashi: Semiconductor integrated circuit, method of fabricating the same and apparatus for fabricating the same. Hitachi, Antonelli Terry Stout & Kraus, March 31, 1998: US05734188 (34 worldwide citation)

A semiconductor integrated circuit comprising first n-channel MISFETs constituting the memory cells of a storage system, second n-channel MISFETs constituting the peripheral circuits of the storage system, and third n-channel MISFETs constituting the output circuit among the peripheral circuits. The ...


8
Kazuji Yamada, Yutaka Kobayashi, Kanji Kawakami, Satoshi Shimada, Masanori Tanabe, Shigeyuki Kobori: Method of making silicon diaphragm pressure sensor. Hitachi, Antonelli Terry & Wands, June 9, 1987: US04670969 (33 worldwide citation)

A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. Th ...


9
Shinji Nakazato, Hideaki Uchida, Yoshikazu Saito, Masahiro Yamamura, Yutaka Kobayashi, Takahide Ikeda, Ryoichi Hori, Goro Kitsukawa, Kiyoo Itoh, Nobuo Tanba, Takao Watanabe, Katsuhiro Shimohigashi, Noriyuki Homma: Semiconductor memory device. Renesas Technology, Antonelli Terry Stout & Kraus, May 25, 2004: US06740958 (32 worldwide citation)

Disclosed is a semiconductor device, such as a semiconductor memory device, having structure wherein invasion of minority carriers from the semiconductor substrate into components of the device, formed on the substrate, can be avoided. The semiconductor memory device can be an SRAM or DRAM, for exam ...


10
Ryuichi Saito, Hidekatsu Onose, Yutaka Kobayashi, Michio Ohue: Semiconductor memory device and method of operation thereof. Hitachi, Antonelli Terry Stout & Kraus, April 26, 1994: US05307304 (31 worldwide citation)

A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferr ...