1
Naotaka Hashimoto, Yutaka Hoshino, Shuji Ikeda: Method of manufacturing semiconductor integrated circuit device having capacitor element. Renesas Technology, Antonelli Terry Stout & Kraus, October 6, 2009: US07598558 (91 worldwide citation)

In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower elect ...


2
Yutaka Hoshino, Shuji Ikeda, Isao Yoshida, Shiro Kamohara, Megumi Kawakami, Tomoyuki Miyake, Masatoshi Morikawa: Semiconductor device and a method of manufacturing the same. Hitachi, Mattingly Stanger & Malur P C, March 4, 2003: US06528848 (22 worldwide citation)

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs


3
Naotaka Hashimoto, Yutaka Hoshino, Shuji Ikeda: SRAM with stacked capacitor spaced from gate electrodes. Hitachi, Antonelli Terry Stout & Kraus, July 14, 1998: US05780910 (16 worldwide citation)

In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower elect ...


4
Tomoyuki Miyake, Masatoshi Morikawa, Yutaka Hoshino, Makoto Hatori: Semiconductor device and a method of manufacturing the same. Renesas Technology, Antonelli Terry Stout and Kraus, February 13, 2007: US07176520 (12 worldwide citation)

To reduce the size and improve the power added efficiency of an RF power module having an amplifier element composed of a silicon power MOSFET, the on resistance and feedback capacitance, which were conventionally in a trade-off relationship, are reduced simultaneously by forming the structure of an ...


5
Yutaka Hoshino, Shuji Ikeda, Isao Yoshida, Shiro Kamohara, Megumi Kawakami, Tomoyuki Miyake, Masatoshi Morikawa: Semiconductor device and a method of manufacturing the same. Hitachi, Mattingly Stanger & Malur P C, August 12, 2003: US06605842 (12 worldwide citation)

In a high frequency amplifying MOSFET having a drain offset region, the size is reduced and the on-resistance is decreased by providing conductor plugs


6
Naotaka Hashimoto, Yutaka Hoshino, Shuji Ikeda: Method of manufacturing semiconductor integrated circuit device having capacitor element. Hitachi, Antonelli Terry Stout & Kraus, May 18, 2004: US06737712 (11 worldwide citation)

In a complete CMOS SRAM having a memory cell composed of six MISFETs formed over a substrate, a capacitor element having a stack structure is formed of a lower electrode covering the memory cell, an upper electrode, and a capacitor insulating film (dielectric film) interposed between the lower elect ...


7
Fumitaka Nakayama, Masatoshi Morikawa, Yutaka Hoshino, Tetsuo Uchiyama: Semiconductor device and manufacturing the same. Renesas Technology Corporation, Renesas Eastern Japan Semiconductor, Antonelli Terry Stout & Kraus, June 22, 2010: US07741656 (10 worldwide citation)

A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semi ...


8
Kazushi Fukuda, Yasuko Yoshida, Yutaka Hoshino, Naotaka Hashimoto, Kyoichiro Asayama, Yuuki Koide, Keiichi Yoshizumi, Eri Okamoto, Satoru Haga, Shuji Ikeda: Process for producing semiconductor integrated circuit. Hitachi, Hitachi ULSI Engineering, Antonelli Terry Stout & Kraus, July 14, 1998: US05780328 (9 worldwide citation)

When the source and drain regions (an n.sup.- type semiconductor region and an n.sup.+ type semiconductor region) of a complementary MISFET and a p-type semiconductor region for use as a punch-through stopper are formed in a p-type well in a substrate having a p- and an n-type well, p-type impuritie ...


9
Yutaka Hoshino, Koji Kataoka, Yasumasa Asanaka: Resin composition for closed-cell foam and cured resin foam prepared by using said resin composition. Ferro Enamels, Sherman and Shalloway, September 23, 1986: US04613628 (8 worldwide citation)

Disclosed is a composition for formation of a cured resin foam, which comprises (A) a curable resin composition comprising an unsaturated polyester prepolymer and an ethylenically unsaturated monomer, (B) an inorganic powder composed of a carbonate and/or bicarbonate, (C) an aqueous solution of a wa ...


10
Hiroaki Ohkuma, Masataka Konishi, Kiyoshi Matsumoto, Toshikazu Oki, Yutaka Hoshino: BU-3420T Antitumor antibiotic. Bristol Myers Company, David M Morse, April 10, 1990: US04916065 (7 worldwide citation)

The novel antitumor antibiotic designated herein as BU-3420T is produced by fermentation of Micromonospora chersina strain M956-1 (ATCC 53710). BU-3420T and its triacetate derivative possess antibacterial and antifungal activity and also inhibit the growth of mammalian tumors such as P388 leukemia i ...