21
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, June 8, 1999: US05910915 (13 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


22
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, June 8, 1999: US05910925 (12 worldwide citation)

A novel memory structure in which memory arrays are organized in sectors with each sector being formed of a single column or a group of columns having their control gates connected in common. In one embodiment, a high speed shift register is used in place of a row decoder to serially shift in data f ...


23
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Davis Wright Tremaine, March 18, 2008: US07345934 (10 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


24
Henry Chien, George Matamis, Tuan Pham, Masaaki Higashitani, Hidetaka Horiuchi, Jeffrey W Lutze, Nima Mokhlesi, Yupin Kawing Fong: Methods of reducing coupling between floating gates in nonvolatile memory. SanDisk Corporation, Vierra Magen Marcus & DeNiro, November 10, 2009: US07615445 (10 worldwide citation)

A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures. An array ha ...


25
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: Eeprom with split gate source side injection. SanDisk Corporation, Parsons Hsue & de Runtz, March 1, 2005: US06861700 (9 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


26
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Davis Wright Tremaine, November 25, 2008: US07457162 (8 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


27
Yan Li, Yupin Kawing Fong, Nima Mokhlesi: Pseudo random and command driven bit compensation for the cycling effects in flash memory. Sandisk Corporation, Davis Wright Tremaine, June 8, 2010: US07734861 (8 worldwide citation)

Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generate ...


28
Yan Li, Yupin Kawing Fong, Toru Miwa: Non-volatile memory and control with improved partial page program capability. SanDisk Corporation, Davis Wright Tremaine, October 9, 2007: US07280396 (8 worldwide citation)

In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold ...


29
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection with sidewall spacers. SanDisk Corporation, Parsons Hsue & de Runtz, October 11, 2005: US06954381 (7 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


30
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Davis Wright Tremaine, June 10, 2008: US07385843 (6 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...