1
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. Sandisk Corporation, Steven F Caserza, Flehr Hohbach Test Albritton & Herbert, April 24, 2001: US06222762 (945 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


2
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong: EEPROM with split gate source side injection. Sundisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, January 27, 1998: US05712180 (248 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


3
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. Sandisk Corporation, Steven F Caserza, Flehr Hohbach Test Albritton & Herbert, November 13, 2001: US06317364 (189 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


4
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Parsons Hsue & de Runtz, February 15, 2005: US06856546 (130 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


5
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. Sandisk Corporation, Steven F Caserza, Flehr Hohbach Test Albritton & Herbert, November 13, 2001: US06317363 (118 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


6
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM cell array structure with specific floating gate shape. SanDisk Corporation, Parsons Hsue & de Runtz, December 16, 2003: US06664587 (114 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


7
Geoffrey S Gongwer, Daniel C Guterman, Yupin Kawing Fong: Smart verify for multi-state memories. SanDisk Corporation, Davis Wright Tremaine, July 10, 2007: US07243275 (110 worldwide citation)

A “smart verify” technique, whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations, is presented. This technique can increase multi-state write speed while maintaining reliable ope ...


8
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, March 16, 1999: US05883409 (109 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


9
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Parsons Hsue & de Runtz, August 8, 2006: US07088615 (108 worldwide citation)

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...


10
Daniel C Guterman, Yupin Kawing Fong: Multi-state memory. SanDisk Corporation, Flehr Hohbach Test Albritton & Herbert, August 14, 2001: US06275419 (104 worldwide citation)

Maximized multi-stage compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...