1
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states. SanDisk Corporation, Skjerven Morrill, February 18, 2003: US06522580 (759 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


2
Jian Chen, Yupin Fong: High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates. SanDisk Corporation, Majestic Parsons Siebert & Hsue, February 2, 1999: US05867429 (497 worldwide citation)

Electric field coupling between floating gates of a high density flash EEPROM cell array has been found to produce errors in reading the states of the cells, particularly when being operated with more than two storage states per cell. The effect of this coupling is overcome by placing a conductive s ...


3
Raul Adrian Cernea, Khandker N Quader, Yan Li, Jian Chen, Yupin Fong: Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells. SanDisk Corporation, Parsons Hsue & de Runtz, August 24, 2004: US06781877 (310 worldwide citation)

Techniques of reducing erroneous readings of the apparent charge levels stored in a number of rows of memory cells on account of capacitive coupling between the cells. All pages of a first row are programmed with a first pass, followed by programming all pages of a second adjacent row with a first p ...


4
Jian Chen, Tomoharu Tanaka, Yupin Fong, Khandker N Quader: Multi-state nonvolatile memory capable of reducing effects of coupling between storage elements. SanDisk Corporation, Kabushiki Kaisha Toshiba, Parsons Hsue & de Runtz, October 19, 2004: US06807095 (209 worldwide citation)

A non-volatile memory system having an array of memory cells with at least one storage element each is operated with a plurality of storage level ranges per storage element. A flash electrically erasable and programmable read only memory (EEPROM) is an example, wherein the storage elements are elect ...


5
Gertjan Hemink, Yupin Fong: Programming non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, May 3, 2005: US06888758 (183 worldwide citation)

One or more programming operations are performed on a set of non-volatile storage elements. For example, the programming operations may include applying a set of programming pulses. A verify process is performed to determine which of the non-volatile storage element have reached an intermediate veri ...


6
Daniel C Guterman, Nima Mokhlesi, Yupin Fong: Charge packet metering for coarse/fine programming of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, June 27, 2006: US07068539 (181 worldwide citation)

A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified ...


7
Raul Adrian Cernea, Khandker N Quader, Yan Li, Jian Chen, Yupin Fong: Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells. SanDisk Corporation, Parsons Hsue & de Runtz, March 22, 2005: US06870768 (116 worldwide citation)

Techniques of reducing erroneous readings of the apparent charge levels stored in a number of rows of memory cells on account of capacitive coupling between the cells. All pages of a first row are programmed with a first pass, followed by programming all pages of a second adjacent row with a first p ...


8
Daniel C Guterman, Nima Mokhlesi, Yupin Fong: Variable current sinking for coarse/fine programming of non-volatile memory. Sandisk Corporation, Vierra Magen Marcus Harmon & DeNiro, February 21, 2006: US07002843 (115 worldwide citation)

A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified ...


9
Yan Li, Yupin Fong: System that compensates for coupling based on sensing a neighbor using coupling. SanDisk Corporation, Vierra Magen Marcus & DeNiro, October 13, 2009: US07602647 (108 worldwide citation)

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). To compensate for this cou ...


10
Daniel C Guterman, Nima Mokhlesi, Yupin Fong: Efficient verification for coarse/fine programming of non-volatile memory. SanDisk Corporation, Vierra Magen Marcus & DeNiro, November 21, 2006: US07139198 (106 worldwide citation)

A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified ...