1
Sun il Kim, Young soo Park, Jae chul Park: Thin film transistors having multi-layer channel. Samsung Electronics, Harness Dickey & Pierce, March 27, 2012: US08143678 (149 worldwide citation)

A transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer. The channel layer may have a double-layer structure, including upper and lower ...


2
Jung hyun Lee, Young soo Park, Won tae Lee: Semiconductor memory device and method of fabricating the same. Samsung Electronics, Lee & Morse P C, January 16, 2007: US07164147 (129 worldwide citation)

Provided are a semiconductor memory device and a method of fabricating the same. The semiconductor memory device includes a heating portion interposed between a transistor and a data storing portion, and a metal interconnection layer connected to the data storing portion. The data storing portion in ...


3
Chang jung Kim, Eun ha Lee, Young soo Park, Jae chul Park: Oxide semiconductors and thin film transistors comprising the same. Samsung Electronics, Harness Dickey & Pierce, May 3, 2011: US07935964 (84 worldwide citation)

Oxide semiconductors and thin film transistors (TFTs) including the same are provided. An oxide semiconductor includes Zn atoms and at least one of Hf and Cr atoms added thereto. A thin film transistor (TFT) includes a channel including an oxide semiconductor including Zn atoms and at least one of H ...


4
Jang yeon Kwon, Min koo Han, Se young Cho, Kyung bae Park, Do young Kim, Min cheol Lee, Sang myeon Han, Takashi Noguchi, Young soo Park, Ji sim Jung: Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same. Samsung Electronics, Harness Sickey & Pierce, July 21, 2009: US07563659 (75 worldwide citation)

A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using inductively coupled plasma chemical vapor deposition (ICP-CVD). After the ICP-CVD, excimer laser annealing (ELA) is performed ...


5
Sang wook Kim, Young soo Park, Jae chul Park: Inverter, logic circuit including an inverter and methods of fabricating the same. Samsung Electronics, Harness Dickey & Pierce, December 7, 2010: US07847287 (68 worldwide citation)

An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide lay ...


6
Young Soo Park, Yun Hee Lee, Sang Hwan Park: Apparatus and method for detecting a mobile phone in idle state. Samsung Electronics, Dilworth & Barrese, December 3, 2002: US06490455 (62 worldwide citation)

A method and apparatus for detecting mobile phone in an Idle State are disclosed. A signal-generating unit generates a pseudo base station signal for transmission to a mobile phone in a detection area. A detecting unit detects a response signal that the mobile phone transmits in response to the pseu ...


7
Chang jung Kim, I hun Song, Dong hun Kang, Young soo Park: ZnO based semiconductor devices and methods of manufacturing the same. Samsung Electronics, Harness Dickey & Pierce, February 22, 2011: US07893431 (36 worldwide citation)

A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3)·y(In2O3)·z(ZnO)  Formula 1 wherein, about 0.75≦x/z≦ about 3.15, and about 0.55≦y/z≦ about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be i ...


8
Jae chul Park, Young soo Park, Sun Il Kim: Thin film transistor and method of forming the same. Samsung Electronics, Harness Dickey & Pierce, March 22, 2011: US07910920 (34 worldwide citation)

A thin film transistor (TFT) may include a channel layer, a source electrode, a drain electrode, a protective layer, a gate electrode, and/or a gate insulating layer. The channel layer may include an oxide semiconductor material. The source electrode and the drain electrode may face each other on th ...


9
Dong hun Kang, Stefanovich Genrikh, I hun Song, Young soo Park, Chang jung Kim: Thin film transistor having a graded metal oxide layer. Samsung Electronics, Harness Dickey & Pierce, November 22, 2011: US08063421 (33 worldwide citation)

Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and th ...


10
Sun il Kim, Young soo Park, Jae chul Park: Thin film transistors having multi-layer channel. Samsung Electronics, Harness Dickey & Pierce, October 15, 2013: US08558323 (29 worldwide citation)

A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a sec ...



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