1
Young Jung Choi, Joo Weon Park: Flash memory device. Hyudai Electronics, Fish & Richardson P C, July 7, 1998: US05777922 (16 worldwide citation)

The present invention provides a flash memory device wherein memory cells in each of the memory cell blocks are divided into a plurality of memory cell groups. In each memory cell group, local bit lines are laid out connected by segmentation transistors. When selecting a memory cell, only a local bi ...


2
Young Jung Choi, Joo Weon Park: Negative voltage drive circuit. Hyundai Electronic, Scott C Harris Esq, July 6, 1999: US05920225 (10 worldwide citation)

The present invention discloses a negative voltage drive circuit which does not takes an influence from the load capacitor or the power supply voltage drive circuit according to the present invention comprises a cross pumping circuit, a pumping unit block and circuit for supplying VCC or VSS power s ...


3
Dong Suk Shin, Inhwa Jung, Chulwoo Kim, Hyung Dong Lee, Young Jung Choi: Impedance-controlled pseudo-open drain output driver circuit and method for driving the same. Hynix Semiconductor, Blakely Sokoloff Taylor & Zafman, August 25, 2009: US07579861 (5 worldwide citation)

An impedance-controlled pseudo-open drain output driver circuit includes: a process, voltage, and temperature (PVT) detector configured to have a delay line receiving a reference clock and detect a state variation of the delay line according to PVT conditions to output detection signals; a select si ...


4
Young Jung Choi: Channel driving circuit of virtual channel DRAM. Hynix Semiconductor, Pillsbury Winthrop, September 3, 2002: US06445604 (1 worldwide citation)

A virtual channel DRAM arrangement is provided which can improve cell efficiency, reduce a layout area of a chip and increase a data processing speed, by unifying a data processing method. The virtual channel DRAM includes a plurality of channel block units consisting of first to fourth unit channel ...


5
Young Jung Choi: Circuit for controlling sense amplifiers. Hyundai Electronics Industries Co, Scott C Harris Esq, July 27, 1999: US05929657

The circuit for controlling a sense amplifier according to the present invention can operate plurality of sense amplifiers groups selectively by controlling a bi-directional address signal for transferring data to the output buffer, an output buffer control signal for controlling the type of the dat ...


6
Young Jung Choi: Virtual channel DRAM. Pillsbury Winthrop, December 6, 2001: US20010048626-A1

A virtual channel DRAM arrangement is provided which can improve cell efficiency, reduce a layout area of a chip and increase a data processing speed, by unifying a data processing method. The virtual channel DRAM includes a plurality of channel block units consisting of first to fourth unit channel ...


7
Dong Suk Shin, Inhwa Jung, Chulwoo Kim, Hyung Dong Lee, Young Jung Choi: Impedance-controlled pseudo-open drain output driver circuit and method for driving the same. Hynix Semiconductor, Blakely Sokoloff Taylor & Zafman, April 3, 2008: US20080079458-A1

An impedance-controlled pseudo-open drain output driver circuit includes: a process, voltage, and temperature (PVT) detector configured to have a delay line receiving a reference clock and detect a state variation of the delay line according to PVT conditions to output detection signals; a select si ...