1
You young Jung, Young ho Lee, Seung joon Yang: Deinterlacing apparatus and method. Samsung Electronics, Staas & Halsey, June 6, 2006: US07057665 (21 worldwide citation)

A deinterlacing apparatus and method use a buffer unit having a previous field buffer, a current field buffer, and a next field buffer to store, sequentially, individual fields of an image signal; calculate a Sum of Absolute Difference (SAD) value of a predetermined search region unit with reference ...


2
Young Ho Lee, Jae Kwan Park, Jae Hwang Sim, Sang Yong Park: Methods of forming fine patterns in integrated circuit devices. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, July 10, 2012: US08216947 (17 worldwide citation)

A method of fabricating an integrated circuit device includes forming first and second mask structures on respective first and second regions of a feature layer. Each of the first and second mask structures includes a dual mask pattern and an etch mask pattern thereon having an etch selectivity rela ...


3
Ha Yong Jung, Jae Young Bae, Sung Chan Kim, Jin Hyuck Yang, Young Ho Lee: Liquid zoom lens. Samsung Electro-Mechanics, June 3, 2008: US07382545 (16 worldwide citation)

A liquid zoom lens mounted on a portable terminal is provided. In the liquid zoom lens, a cylindrical body has upper and lower openings to which one pair of lenses is coupled. An auto-focus lens part includes a first insulating liquid layer, a first electrolyte layer, and a first lens. The first ins ...


4
Young Ho Lee, Seung Joon Jeon, Tae Hang Ahn: Semiconductor device with strained channel and method of fabricating the same. Hynix Semiconductor, Lowe Hauptman Ham & Berner, August 28, 2012: US08253204 (14 worldwide citation)

A semiconductor device includes: a gate pattern over a substrate; recess patterns provided in the substrate at both sides of the gate pattern, each having a side surface extending below the gate pattern; and a source and a drain filling the recess patterns, and forming a strained channel under the g ...


5
You young Jung, Young ho Lee, Seung joon Yang: Deinterlacing apparatus and method. Samsung Electronics, Staas & Halsey, January 22, 2008: US07321396 (14 worldwide citation)

A deinterlacing apparatus and method thereof include a motion compensation unit implementing motion-compensated temporal interpolation for each of estimated motion vectors with reference to a previous field and a next field, which are respectively ahead of and behind a current field to be interpolat ...


6
Sung Chan Kim, Ha Yong Jung, Jin Hyuck Yang, Young Ho Lee: Liquid lens. Samsung Electro-Mechanics, December 16, 2008: US07466493 (14 worldwide citation)

A liquid lens comprises a cylindrical body having a pair of glass lenses which are coupled to upper and lower openings of the body, respectively; an aspheric transmitting partition lens inserted and fixed in the central portion of the body; an auto-focus lens section composed of a first insulating l ...


7
Jae hwang Sim, Sang yong Park, Young ho Lee: Method of forming fine patterns of semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, March 27, 2012: US08142986 (11 worldwide citation)

A method of forming fine patterns of a semiconductor device, in which a plurality of conductive lines formed in a cell array region are integrally formed with contact pads for connecting the conductive lines to a peripheral circuit. In this method, a plurality of mold mask patterns, each including a ...


8
Young ho Lee: Coupling structure for air guide of front-end module. Hyundai Mobis, Greenblum & Bernstein, July 11, 2006: US07073848 (9 worldwide citation)

A coupling structure for an air guide of a front end module includes a plurality of rib members formed at a lateral portion of the front end module, at least one support ribs protruding from a fixing surface of the air guide, and a plurality of insert blades extending at a right angle at one end of ...


9
Sang Yong Park, Jae Hwang Sim, Young Ho Lee, Kyung Lyul Moon, Jae Kwan Park: Methods of forming fine patterns in the fabrication of semiconductor devices. Samsung Electronics, Onello & Mello, November 15, 2011: US08057692 (7 worldwide citation)

In a method of forming a semiconductor device, a feature layer is provided on a substrate and a mask layer is provided on the feature layer. A portion of the mask layer is removed in a first region of the semiconductor device where fine features of the feature layer are to be located, the mask layer ...


10
Young Ho Lee, Jae Hwang Sim, Sang Yong Park, Kyung Lyul Moon: Method of forming patterns for semiconductor device. Samsung Electronics, Onello & Mello, November 27, 2012: US08318603 (7 worldwide citation)

Provided is a method of forming patterns for a semiconductor device in which fine patterns and large-width patterns are formed simultaneously and adjacent to each other. In the method, a first layer is formed on a substrate so as to cover a first region and a second region which are included in the ...