1
Tsutomu Maeda, Tsuyoshi Kawai, Yoshio Ozawa: Remote monitoring system for air conditioners. Sanyo Electric, Rader Fishman & Grauer PLLC, May 9, 2006: US07043339 (87 worldwide citation)

This invention provides a remote monitoring system for air conditioners installed respectively in a plurality of buildings for concentrically monitoring the operating state of the air conditioners from a distance. The system comprises data collectors 3 installed in the respective buildings, and a re ...


2
Seiji Inumiya, Katsuhiko Hieda, Tetsuo Matsuda, Yoshio Ozawa: Semiconductor device and method for manufacturing same. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, June 26, 2001: US06251763 (66 worldwide citation)

A method of manufacturing a semiconductor device comprising the steps of forming a dummy film and a dummy gate pattern at a predetermined gate-forming region on a semiconductor substrate, forming a first side wall insulating film on a side wall of the dummy gate pattern, forming an interlayer insula ...


3
Masaru Kidoh, Ryota Katsumata, Masaru Kito, Yoshiaki Fukuzumi, Hideaki Aochi, Hiroyasu Tanaka, Yasuyuki Matsuoka, Yoshio Ozawa, Mitsuru Sato: Nonvolatile semiconductor memory and method for manufacturing the same. Kabushiki Kaisha Toshiba, Oblon Spivak McClelland Maier & Neustadt L, October 26, 2010: US07821058 (49 worldwide citation)

According to an aspect of the present invention, there is provided a nonvolatile semiconductor memory including: a columnar semiconductor; a charge storage insulating film including: a first insulating film formed around the columnar semiconductor, a charge storage film formed around the first insul ...


4
Hiroshi Iwai, Toyota Morimoto, Hisayo S Momose, Kikuo Yamabe, Yoshio Ozawa: Semiconductor device with nitrided gate insulating film. Kabushiki Kaisha Toshiba, Foley & Lardner, August 17, 1993: US05237188 (44 worldwide citation)

A semiconductor device formed on a silicon substrate consisting of the steps of producing a silicon oxide film on the silicon substrate, producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a cond ...


5
Masahiro Kiyotoshi, Akihito Yamamoto, Yoshio Ozawa, Fumitaka Arai, Riichiro Shirota: Semiconductor memory and method of manufacturing the same. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, August 30, 2011: US08008732 (39 worldwide citation)

A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being ...


6
Yoshinori Takahashi, Yoshio Ozawa, Shigenobu Fujiwara: Apparatus and method for managing software licenses and storage medium storing a program for managing software licenses. Fujitsu, Staas & Halsey, November 21, 2006: US07139737 (38 worldwide citation)

An inventory information collecting unit automatically collects inventory information including inventory information regarding software installed in each of a plurality of computers within an organization. A usage-state information collecting unit updates a software license usage number which repre ...


7
Hiroshi Iwai, Toyota Morimoto, Hisayo S Momose, Kikuo Yamabe, Yoshio Ozawa: Method for fabricating semiconductor device in which threshold voltage shift and charge-pumping current are improved. Kabushiki Kaisha Toshiba, Foley & Lardner, February 6, 1996: US05489542 (37 worldwide citation)

A method for fabricating a semiconductor device on a silicon substrate, consists of producing a silicon oxide film on the silicon substrate producing a thin silicon nitride film on the silicon oxide film, thermally nitriding the silicon nitride film in an atmosphere of nitrogenous gas, producing a c ...


8
Yoshitaka Tsunashima, Seiji Inumiya, Yasumasa Suizu, Yoshio Ozawa, Kiyotaka Miyano, Masayuki Tanaka: Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof. Kabushiki Kaisha Toshiba, Frommer Lawrence & Haug, August 31, 2004: US06784508 (37 worldwide citation)

Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous me ...


9
Yoshio Ozawa, Akihito Yamamoto, Katsuaki Natori, Masayuki Tanaka, Katsuyuki Sekine, Daisuke Nishida, Ryota Fujitsuka: Semiconductor device. Kabushiki Kaisha Toshiba, Finnegan Henderson Farabow Garrett & Dunner L, August 16, 2011: US07999304 (32 worldwide citation)

A semiconductor device includes a semiconductor substrate, and nonvolatile memory cells, each of the cells including a channel region having a channel length and a channel width, a tunnel insulating film, a floating gate electrode, a control gate electrode, an inter-electrode insulating film between ...


10
Yoshio Ozawa, Mitsukazu Hosoya, Takashi Matsumoto, Kimitoshi Saito: Automatic paper loading device and method for photographic printer. Fuji Photo Film, Sughrue Mion Zinn Macpeak & Seas, February 16, 1993: US05187531 (30 worldwide citation)

An automatic paper loading device and method wherein a paper magazine is placed on a magazine table. The table is slid toward a pair of feed rollers disposed at a paper entrance of a printer processor. While the paper magazine is moving together with the magazine table, the feed roller pair starts r ...