1
Yoshio Ishihara, Masayuki Toda, Tadahiro Ohmi: Process for laser detection of gas and contaminants in a wafer transport gas tunnel. Nippon Sanso Corporation, Darby & Darby, September 14, 1999: US05953591 (81 worldwide citation)

A process of using a transport system for transporting substrate wafer, for making semiconductor integrated circuits and liquid crystal display panels and the like advanced devices, is presented. The object is to prevent surface degradation which may be inflicted on the surface to interfere with pro ...


2
Shang Qian Wu, Jun ichi Morishita, Yoshio Ishihara, Tetsuya Kimijima: Analysis method for gases and apparatus therefor. Nippon Sanso Corporation, Oblon Spivak McClelland Maier & Neustadt P C, March 21, 2000: US06040915 (14 worldwide citation)

A method for analyzing an impurity in a gas including the steps of: introducing a gas with an impurity into a first cell; introducing a gas with no impurity into a second cell; maintaining identical pressures in the first and second cells; irradiating a light from a light irradiating source; varying ...


3
Tadahiro Ohmi, Yoshio Ishihara, Akihiro Nakamura: Gas supplying method and system. Taiyo Nippon Sanso Corporation, Nixon & Vanderhye P C, August 21, 2007: US07258725 (13 worldwide citation)

Gas supplying method and system in which effective component gas in exhaust gas can be separated and purified efficiently to be resupplied regardless of variation in the flow rate or composition of the exhaust gas and consumed gas can be replenished efficiently. In a method for collecting exhaust ga ...


4
Yoshio Ishihara, Hiroshi Masusaki, Shang Qian Wu, Koh Matsumoto: Infrared spectroscopic analysis method for gases and device employing the method therein. Nippon Sanso Corporation, Oblon Spivak McClelland Maier & Neustadt P C, October 13, 1998: US05821537 (12 worldwide citation)

A device and method for measuring an impurity in a trace concentration in a gas to be measured by infrared spectroscopic analysis employing a diode laser are provided. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is directed into sample cell 5 and pl ...


5
Hiroyuki Hasegawa, Tomonori Yamaoka, Yoshio Ishihara, Hiroshi Masusaki: Semiconductor manufacturing method and semiconductor manufacturing apparatus. Taiyo Nippon Sanso Corporation, Pillsbury Winthrop Shaw Pittman, April 25, 2006: US07033843 (11 worldwide citation)

A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture cont ...


6
Yoshio Ishihara, Hiroshi Yamazaki, Sumiyo Yamane, Koh Matsumoto: Apparatus for reducing dissolved oxygen. Nippon Sanso Corporation, Armstrong Westerman Hattori McLeland & Naughton, June 16, 1998: US05766321 (11 worldwide citation)

Disclosed is a dissolved oxygen reducing apparatus which enables supplying a liquid containing very small amounts of dissolved oxygen. The dissolved oxygen reducing apparatus includes a bubbling vessel (24) having a liquid charge inlet (21), a liquid discharge outlet (22) and an inert gas discharge ...


7
Tadahiro Ohmi, Yoshio Ishihara: Method and apparatus for recovering rare gas. Nippon Sanso Corporation, Tadahiro Ohmi, Armstrong Westerman Hattori McLeland & Naughton, April 17, 2001: US06217633 (10 worldwide citation)

A process and an apparatus for recovering a noble gas, which can recover a noble gas exhausted from a noble gas employing system efficiently and also can supply the noble gas of a predetermined purity to the noble gas employing system and which can reduce consumption of the noble gas. In the process ...


8
Yoshio Ishihara, Shigeru Hayashida, Toru Nagasaka, Tetsuya Kimijima, Tadahiro Ohmi: Method and apparatus for collecting rare gas. Nippon Sanso Corporation, Merchant & Gould P C, August 12, 2003: US06605134 (10 worldwide citation)

There is provided a method and an apparatus for collecting a rare gas, which are capable of effectively collecting the rare gas contained in an exhaust gas exhausted from a rare gas using apparatus such as a plasma apparatus or the like, and moreover capable of securely supplying the rare gas having ...


9
Jun ichi Morishita, Yoshio Ishihara, Shang Qian Wu: Gas spectrochemical analyzer, and spectrochemical analyzing method. Nippon Sanso Corporation, Oblon Spivak McClelland Maier & Neustadt P C, February 11, 2003: US06519039 (9 worldwide citation)

A gas spectroscopic analysis device for analyzing a trace impurity in a sample gas by obtaining the second derivative spectrum of the light absorption intensity by passing frequency modulated diode laser light through a low-pressure sample gas is provided with a modulation amplitude calculating devi ...


10
Yoshio Ishihara, Hiroshi Masusaki, Shang Qian Wu, Koh Matsumoto: Infrared spectroscopic analysis method for gases and device employing the method therein. Nippon Sanso Corporation, Oblon Spivak McClelland Maier & Neustadt P C, December 30, 1997: US05703365 (8 worldwide citation)

The present invention relates to a device and method for measuring an impurity in a trace concentration in a gas to be measured by means of infrared spectroscopic analysis employing a diode laser. In order to carry out analysis with high sensitivity and high accuracy, the gas to be measured is direc ...



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