1
Yoshihiro Hayashi: Method of stacking semiconductor substrates for fabrication of three-dimensional integrated circuit. NEC Corporation, Sughrue Mion Zinn Macpeak & Seas, February 11, 1992: US05087585 (154 worldwide citation)

A semiconductor substrate stacking method comprises the steps of preparing first and second thin film devices each in the form of a thin film having a connection electrode formed on an upper surface thereof and a connection electrode formed on an undersurface thereof, each of the thin film devices b ...


2
Yoshihiro Hayashi, Satoshi Ozeki, Thomas Kao, Will Chen: Battery controller for controlling batteries of different kinds and including battery monitoring means for calculating remaining operation time and an information processing apparatus including such battery controller. Hitachi, Clevo Co, Fay Sharpe Beall Fagan Minnich & McKee, October 5, 1999: US05963010 (125 worldwide citation)

A battery controller for controlling at least two batteries of different kinds, includes a kind-of-battery detection unit for detecting a kind of battery, and a battery switching unit in which a switching voltage, a suspended mode shift voltage and a termination voltage having different values in ac ...


3
Hajime Yamagami, Kouichi Terada, Yoshihiro Hayashi, Takashi Tsunehiro, Kunihiro Katayama, Kenichi Kaki, Takeshi Furuno: Storage device employing a flash memory. Hitachi, Antonelli Terry Stout & Kraus, July 1, 1997: US05644539 (86 worldwide citation)

A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, said semiconductor disk comprises a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in w ...


4
Hajime Yamagami, Kouichi Terada, Yoshihiro Hayashi, Takashi Tsunehiro, Kunihiro Katayama, Kenichi Kaki, Takeshi Furuno: Storage device employing a flash memory. Hitachi, Antonelli Terry Stout & Kraus, January 22, 2002: US06341085 (82 worldwide citation)

In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in ...


5
Hajime Yamagami, Kouichi Terada, Yoshihiro Hayashi, Takashi Tsunehiro, Kunihiro Katayama, Kenichi Kaki, Takeshi Furuno: Storage device employing a flash memory. Hitachi, Antonelli Terry Stout & Kraus, February 12, 2002: US06347051 (64 worldwide citation)

A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in wh ...


6
Yoshihiro Hayashi: Surface treatment of polishing cloth. NEC Corporation, Sughrue Mion Zinn Macpeak & Seas, May 6, 1997: US05626509 (50 worldwide citation)

An apparatus for surface treatment of polishing cloth includes a rotary cloth mounting section on which a polishing cloth is to be attached, and a rotary surface treatment tool made of an inorganic material other than metal and having at least a protrusion with an irregular surface portion on the su ...


7
Yoshihiro Hayashi, Naoya Inoue, Kishou Kaneko: Semiconductor device and method of manufacturing semiconductor device. Renesas Electronics Corporation, McGinn IP Law Group PLLC, February 19, 2013: US08378341 (43 worldwide citation)

A semiconductor device of the present invention has a first interconnect layer formed over the semiconductor substrate, and a semiconductor element; the first interconnect layer has an insulating layer, and a first interconnect filled in a surficial portion of the insulating layer; the semiconductor ...


8
Hajime Yamagami, Kouichi Terada, Yoshihiro Hayashi, Takashi Tsunehiro, Kunihiro Katayama, Kenichi Kaki, Takeshi Furuno: Storage device employing a flash memory. Renesas Technology, Antonelli Terry Stout & Kraus, September 7, 2004: US06788609 (42 worldwide citation)

A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in wh ...


9
Naoya Inoue, Yoshihiro Hayashi: DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor. NEC Corporation, November 14, 2000: US06146906 (40 worldwide citation)

In a method for manufacturing a capacitor including a lower electrode, a ferroelectric layer formed on the lower electrode, and an upper electrode formed on the ferroelectric layer, at least one of the lower and upper electrodes is made of laminated metal and conductive oxide. The laminated metal an ...


10
Hajime Yamagami, Kouichi Terada, Yoshihiro Hayashi, Takashi Tsunehiro, Kunihiro Katayama, Kenichi Kaki, Takeshi Furuno: Storage device employing a flash memory. Hitachi, Antonelli Terry Stout & Kraus, October 10, 2000: US06130837 (39 worldwide citation)

A semiconductor disk wherein a flash memory into which data is rewritten in block units is employed as a storage medium, said a semiconductor disk comprises a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory i ...