1
Harada Yuji, Hatakeyama Jun, Yoshihara Takao, Kusaki Wataru, Kobayashi Tomohiro, Hasegawa Koji, Maeda Kazunori: Polymer compound, resist material, and pattern-forming method. Shin Etsu Chem, May 15, 2008: JP2008-111103 (160 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material suitable for good liquid-immersion lithography, and to provide a pattern-forming method.SOLUTION: The polymer compound contains general formulas in the figure, and has 1,000-500,000 Mw (weight average molecular weight). In the formulas, R1a, R1b and ...


2
Hatakeyama Jun, Yoshihara Takao, Harada Yuji, Kusaki Wataru: Resist material and patterning process using the same. Shin Etsu Chem, May 29, 2008: JP2008-122932 (125 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material having good barrier performance to water, capable of suppressing dissolution of a resist film thereof in water, having a large backward contact angle to water, capable of eliminating liquid droplet residues, having excellent process applicability wi ...


3
Nagahara Seiji, Sakurada Toyohisa, Yoshihara Takao: Chemically amplified photoresist composition, method for manufacturing semiconductor device using the same and semiconductor substrate. NEC Electronics, Shin Etsu Chem, June 13, 2003: JP2003-167345 (11 worldwide citation)

PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition suitable for resist patterning on a substrate whose surface has steps, to provide a method for manufacturing a semiconductor device using the composition and to provide a semiconductor substrate.SOLUTION: In the method f ...


4
Watanabe Takeshi, Tachibana Seiichiro, Yoshihara Takao: Polymer for resist, resist material, and pattern formation method. Shin Etsu Chem, May 17, 2007: JP2007-119678 (7 worldwide citation)

PROBLEM TO BE SOLVED: To provide a positive-type resist material wherein the pattern degradation during developing operation is inhibited and the mask error factor is reduced.SOLUTION: The resist material is a resin wherein the rate of dissolution into an alkali developer is increased by the action ...


5
Hatakeyama Jun, Kusaki Wataru, Harada Yuji, Yoshihara Takao: Resist material and pattern forming method using it. Shin Etsu Chem, May 8, 2008: JP2008-107443 (5 worldwide citation)

PROBLEM TO BE SOLVED: To prevent (1) inter-mixing of the protective layer and the photoresist layer and prevent (2) defects by making the resist surface more hydrophilic after developing in an immersion lithography process which inserts water between the protective layer and the projection lens on t ...


6
Hatakeyama Jun, Kusaki Wataru, Yoshihara Takao, Harada Yuji: Resist material and patterning process using the same. Shin Etsu Chem, October 23, 2008: JP2008-257166 (4 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material to be used for immersion lithography of microfabrication in the manufacturing process of a semiconductor device, or the like, and a resist pattern forming process using the same.SOLUTION: The resist material comprises a high molecular compound used ...


7
Hatakeyama Jun, Yoshihara Takao, Kanou Takeshi, Hasegawa Koji, Kawai Yoshio, Takemura Katsuya: Pattern forming method and resist material for use in it. Shin Etsu Chem, March 26, 2009: JP2009-063989 (3 worldwide citation)

PROBLEM TO BE SOLVED: To provide a pattern forming method effective for reducing the pitch between patterns by forming a line pattern in a space area of a pattern formed by the first exposure by the second exposure, and resist material for use therein.SOLUTION: The pattern forming method includes: a ...


8
Hatakeyama Jun, Yoshihara Takao, Takemura Katsuya, Kawai Yoshio: Patterning process. Shin Etsu Chem, June 25, 2009: JP2009-139926 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a patterning process in which a first resist film is cured by irradiation with ultrashort-wavelength light of ≤180 nm wavelength to prevent mixing of the first and second resist films and dissolution of a first resist pattern in a developer in second development.SOLU ...


9
Watanabe Takeshi, Nishi Tsunehiro, Funatsu Akiyuki, Yoshihara Takao: Polymer for resist, resist material and pattern-forming method. Shin Etsu Chem, March 3, 2005: JP2005-054070 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material which is prepared by using a polymer and is sensitive to high energy rays, excellent in resolution and therefore useful for microfabrication for manufacturing a VLSI by electron beams or far ultraviolet rays.SOLUTION: The resin whose dissolution rat ...


10
Kubota Hiroshi, Takemura Katsuya, Yoshihara Takao: Resist material and pattern forming method. Shin Etsu Chem, November 16, 2001: JP2001-318459 (1 worldwide citation)

PROBLEM TO BE SOLVED: To provide a resist material having good appliability, suppressing the generation of micro-bubbles in a solution and less liable to cause various defects that cause the lowering of yield in a device process and to provide a pattern forming method.SOLUTION: The resist material c ...