1
Woo Seok Yang, Seung Jin Yeom, Yong Sik Yu: Semiconductor device having a capacitor and method for the manufacture thereof. Hyundai Electronics, Jacobson Holman PLLC, September 30, 2003: US06627462 (16 worldwide citation)

A semiconductor device for use in a memory cell includes an active matrix provided with a silicon substrate, a transistor formed on the silicon substrate, a capacitor structure formed over the transistor, a metal interconnection for electrically connecting the capacitor structure to the transistor, ...


2
Yong Sik Yu, Yong Ku Baek, Young Jin Park, Jong Choul Kim: Metal organic chemical vapor deposition apparatus and deposition method. Hyundai Electronics, Gary M Nath, Jerald L Meyer, Nath & Associates PLLC, January 15, 2002: US06338759 (10 worldwide citation)

A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount o ...


3
Yong Sik Yu: Methods for forming ferroelectric capacitors having a bottom electrode with decreased leakage current. Hyundai Electronics, Blakely Sokoloff Taylor & Zafman, November 14, 2000: US06146963 (6 worldwide citation)

Provided are methods for ferroelectric capacitors using a film of ruthenium dioxide as a bottom electrode. The method according to the invention includes the steps of: forming a first electrode of ruthenium dioxide over a lower layer including a conductive plug, the electrode being connected to the ...


4
Yong Sik Yu, Yong Ku Baek, Young Jin Park, Jong Choul Kim: Metal organic chemical vapor deposition apparatus and deposition method. Hyundai Electronics, Gary M Nath & Associates Nath, December 28, 1999: US06008143 (6 worldwide citation)

A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount o ...


5
Kwon Hong, Yong Sik Yu: Semiconductor device having a ferroelectric capacitor and method for the manufacture thereof. Hyundai Electronics, Jacobson Holman PLLC, October 15, 2002: US06465260 (5 worldwide citation)

A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, a transistor formed on the semiconductor substrate, an isolation region for isolating the transistor and an insulating layer formed on top of the transistor and the isolation region; an ...


6
Yong Sik Yu, Kwon Hong: Method for fabricating capacitors of semiconductor devices. Hyundai Electronics, Thelen Reid & Priest, January 19, 1999: US05861332 (5 worldwide citation)

A method for fabricating a capacitor of a semiconductor device, which is capable improving the chemical and thermal stability of lower electrodes. The method includes forming an interlayer insulating film provided with a contact hole over a semiconductor substrate, forming a conductive polysilicon p ...


7
Kwon Hong, Yong Sik Yu: Method for forming a lower electrode for use in a semiconductor device. Hyundai Electronics, Finnegan Henderson Farabow Garrett & Dunner L, May 28, 2002: US06395601 (4 worldwide citation)

A method for manufacturing a semiconductor device can form a thick lower electrode made of Pt. The method begins with the preparation of an active matrix provided with at least one diffusion region and an insulating layer formed thereon. Thereafter, the insulating layer is patterned into a predeterm ...


8
Yong Sik Yu: Method for fabricating ferroelectric memory devices capable of preventing volatility of elements in ferroelectric films. Hyundai Electronics, Blakely Sokoloff Taylor & Zafman, September 4, 2001: US06284588 (3 worldwide citation)

The present invention relates to a highly integrated memory device; and, more particularly, to a ferroelectric capacitor memory device capable of improving an electrical interconnection between a lower electrode and an active region of a cell transistor. In accordance with an aspect of the present i ...


9
Yong Sik Yu, Kweon Hong: Method of manufacturing a capacitor in a semiconductor device. Hyundai Electronic, Finnegan Henderson Farabow Garrett & Dunner L, October 22, 2002: US06468874 (3 worldwide citation)

There is disclosed a method of manufacturing a capacitor in a semiconductor device. In order to solve the problems that it is difficult to secure an effective surface area and a misalignment between a capacitor plug and an underlying electrode occurs in a capacitor having a stack structure using a B ...


10
Jeong Tae Kim, Yong Sik Yu: Method for forming a lower electrode for use in a semiconductor device. Hyundai Electronics, Jacobson Holman PLLC, October 15, 2002: US06465300 (2 worldwide citation)

A method for manufacturing a semiconductor device including steps of a) preparing an active matrix provided with at least one diffusion region and an insulating layer formed thereon; b) patterning the insulating layer into a predetermined configuration, thereby exposing the diffusion regions; c) for ...