1
Takeshi Inoue, Yoichi Miyasaka: Piezoelectric composite thin film resonator. Nippon Electric, Laff Whitesel Conte & Saret, June 26, 1984: US04456850 (178 worldwide citation)

A piezoelectric composite thin-film resonator has good temperature stability and resonance response, in a fundamental thickness-extensional vibration mode. Spurious vibrations caused by even-number order harmonic overtones are suppressed. The resonator has a thin film of SiO.sub.2 or other materials ...


2
Yoichi Miyasaka, Shogo Matsubara: Thin film capacitor and manufacturing method thereof. NEC Corporation, Burns Doane Swecker & Mathis, October 1, 1991: US05053917 (108 worldwide citation)

This film capacitors in accordance with the present invention include a silicon electrode, a first electrode layer consisting of either one of titanium, titanium silicide, titanium nitride, tantalum, molybdenum, tungsten, tantalum silicide, molybdenum silicide, tungsten silicide, alloys thereof and ...


3
Shogo Matsubara, Yoichi Miyasaka: Thin-film capacitors and process for manufacturing the same. NEC Corporation, Burns Doane Swecker & Mathis, June 16, 1992: US05122923 (96 worldwide citation)

A thin-film capacitor comprises a substrate, a first electrode, of polycrystalline silicon, a second electrode, a dielectric, and a third electrode such as aluminum in the structure stacked in sequence from bottom to top. The second electrode directly on which the dielectric layer is formed is made ...


4
Shogo Matsubara, Yoichi Miyasaka, Sadahiko Miura: Electronic device substrate using silicon semiconductor substrate. NEC Corporation, Burns Doane Swecker & Mathis, January 28, 1992: US05084438 (66 worldwide citation)

An electronic device substrate includes a spinel epitaxial film formed on a silicon single-crystal substrate and an oxide superconductor layer formed on the spinel film. The oxide superconductor layer is represented by formula P.sub.x (Q,Ca).sub.y Cu.sub.z O.sub..delta. and contains at least one ele ...


5
Shintaro Yamamichi, Hirohito Watanabe, Yoichi Miyasaka: Method of manufacturing thin film capacitor. NEC Corporation, Sughrue Mion Zinn Macpeak & Seas PLLC, May 1, 2001: US06225133 (48 worldwide citation)

After an interlayer insulating film is deposited on a silicon substrate, a contact hole or contact holes is or are formed at a desired position(s) and, then, after a polysilicon layer is deposited and the contact hole(s) is (are) embedded, the surface of the polysilicon layer is flattened by chemica ...


6
Joseph D Cuchiaro, Akira Furuya, Carlos A Paz de Araujo, Yoichi Miyasaka: Method of fabricating ferroelectric integrated circuit using oxygen to inhibit and repair hydrogen degradation. Symetrix Corporation, NEC Corporation, Duft Graziano & Forest P C, December 26, 2000: US06165802 (25 worldwide citation)

An integrated circuit is formed that contains a ferroelectric element comprising metal oxide material containing at least two metals. An oxygen-recovery anneal is conducted in ambient oxygen at a temperature range from 300.degree. to 1000.degree. C. for a time period from 20 minutes to 2 hours. The ...


7
Joseph D Cuchiaro, Akira Furuya, Carlos A Paz de Araujo, Yoichi Miyasaka: Ferroelectric integrated circuit with protective layer incorporating oxygen and method for fabricating same. Symetrix Corporation, NEC Corporation, Duft Graziano & Forest P C, May 1, 2001: US06225656 (23 worldwide citation)

A protective layer in a ferroelectric integrated circuit contains small amounts of oxygen to protect ferroelectric oxide material against hydrogen degradation during the fabrication process. Typically, the protective layer is a hydrogen diffusion barrier layer formed to cover a thin film of ferroele ...


8
Shintaro Yamamichi, Toshiyuki Sakuma, Yoichi Miyasaka: Method for fabricating thin-film capacitor with restrained leakage current at side and end portions of electrodes in a semiconductor integrated circuit device. NEC Corporation, Burns Doane Swecker & Mathis, July 26, 1994: US05332684 (14 worldwide citation)

A method for fabricating a thin-film capacitor for a semiconductor integrated circuit device includes steps of forming a barrier metal layer, forming a dielectric film, forming an interlayer insulating film, exposing the dielectric film and forming an upper electrode. The thin-film capacitor is fabr ...


9
Shintaro Yamamichi, Toshiyuki Sakuma, Yoichi Miyasaka: Compact semiconductor device including a thin film capacitor of high reliability. NEC Corporation, Sughrue Mion Zinn Macpeak & Seas, July 23, 1996: US05539613 (12 worldwide citation)

In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric layer, the lower electrode layer is surrounded ...


10
Joseph D Cuchiaro, Akira Furuya, Carlos A Paz de Araujo, Yoichi Miyasaka: Integrated circuit having self-aligned hydrogen barrier layer and method for fabricating same. Symetrix Corporation, NEC Corporation, Patton Boggs, January 28, 2003: US06512256 (10 worldwide citation)

In an integrated circuit, a stack of thin film layers comprising respectively a bottom electrode, a thin film of metal oxide, a top electrode, a lower barrier-adhesion layer, a hydrogen barrier layer, and an upper barrier-adhesion layer are patterned to form a memory capacitor capped with a self-ali ...