Min Yi Lin: Dual damascene interconnect structure with reduced parasitic capacitance. United Microelectronics, Winston Hsu, October 2, 2001: US06297554 (191 worldwide citation)

An improved structure of a dielectric layer between two adjacent copper wiring lines is disclosed. The dielectric layer is composed of silicon oxide and the adjacent copper wiring lines are formed using a dual damascene process. The structure of the dielectric layer according to the present inventio ...

Anthony J Brinkman, Yi Lin, Michael H Penrod, Nancy L Sweet, Linda Trout Jordan, Gerald J Wardzinski: Apparatus and method for generating call duration billing records utilizing ISUP messages in the CCS/SS7 telecommunications network. Unisys Corporation, Albert B Cooper, Mark T Starr, January 27, 1998: US05712908 (144 worldwide citation)

A computer platform with a Call Billing application thereon monitors linksets of the CCS/SS7 network extending between Local Exchange Carrier (LEC) Signaling Transfer Points (STP) and Competitive Access Provider (CAP) switches such as End Offices (EO) and Tandem Offices, where the CAP switches have ...

Ching Yi Lin, Jo Wen Lin: Cervical dowel and insertion tool. Osteotech, Dilworth & Barrese, March 4, 2003: US06527773 (115 worldwide citation)

A dowel insertion tool includes a T-shaped handle and a hollow sleeve which extends distally from the T-shaped handle. A shaft extends from the handle through the hollow sleeve and includes a transverse extension. A rotatable knob having an annular channel positioned to receive the transverse extens ...

Chun Kai Derrick Wei, Kuan Yeu Chen, Hung I Wang, Song Yi Lin: DC power converter and mode-switching method. MStar Semiconductor, WPAT PC, Justin King, December 27, 2011: US08085013 (102 worldwide citation)

A DC converter and a mode-switching method used in an electronic apparatus are included. The electronic apparatus includes a subsystem circuit. The DC power converter comprises a first voltage converting circuit electrically connected to the subsystem circuit, receiving a system voltage and a first ...

Horng Chih Lin, Liang Po Chen, Hsiao Yi Lin, Chun Yen Chang: Method for fabricating thin-film transistor with bottom-gate or dual-gate configuration. National Science Council, Fish & Richardson P C, August 19, 1997: US05658806 (98 worldwide citation)

A method for fabricating a self-aligned thin-film transistor, in accordance with the present invention, first involves forming a gate electrode on an insulating layer. Next, a gate dielectric layer is formed to enclose the gate electrode. Subsequently, a semiconductor layer, a conducting layer, and ...


Charles A Vacanti, Yi Lin Cao, Robert S Langer, Joseph P Vacanti, Keith Paige, Joseph Upton: Tissue engineered tendons and ligaments. Massachusetts Institute of Technology, Cambridge Childern s Medical Center Corproration, Clark & Elbing, September 26, 2000: US06123727 (86 worldwide citation)

Connective tissue, including neo-tendons and ligaments, has been constructed using biodegradable synthetic scaffolds seeded with tenocytes. The scaffolds are preferably formed from biodegradable fibers formed of a polymer such as polyglycolic acid-polylactic acid copolymers, and seeded with cells is ...

Donald Ralph Hart, Kung Yi Lin: Method of capturing a physically consistent mirrored snapshot of an online database. Unisys Corporation, Alfred W Kozak, Mark T Starr, Lise A Rode, April 5, 2005: US06877016 (80 worldwide citation)

An on-line primary database is momentarily QUIESCED to enable a physically consistent snapshot of the primary database to be mirrored to a secondary database as a backup while allowing the primary database to continue on servicing multiple user applications.

Chuan Yi Lin, Song Bor Lee, Ching Kun Huang, Sheng Yuan Lin: Method of forming through-silicon vias. Taiwan Semiconductor Manufacturing Company, Slater & Matsil L, November 2, 2010: US07825024 (80 worldwide citation)

A method of forming a semiconductor device having a through-silicon via (TSV) is provided. A semiconductor device is provided having a first dielectric layer formed thereon. One or more dielectric layers are formed over the first dielectric layer, such that each of the dielectric layers have a stack ...

Andrew T Hunt, Tzyy Jiuan Hwang, Helmut G Hornis, Wen Yi Lin: Formation of thin film capacitors. MicroCoating Technologies, March 27, 2001: US06207522 (79 worldwide citation)

Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, ...