1
Ichiro Yamashita, Koutaro Shimizu, Yoshiaki Banba, Yasushi Shimanuki, Akira Higuchi, Hisashi Furuya: Method and apparatus for growing silicon crystals. Mitsubishi Kinzoku Kabushiki Kaisha, Japan Silicon, Scully Scott Murphy & Presser, January 1, 1991: US04981549 (52 worldwide citation)

A silicon single-crystal growing method is disclosed which immerses a seed crystal in a silicon melt and pulls the seed crystal from the melt to thereby grow a silicon single-crystal, and in which the dwelling time of the silicon single-crystal, which is being pulled in a temperature range of betwee ...


2
Kenji Tomizawa, Koichi Sassa, Yasushi Shimanuki: Apparatus for growing single crystals of dissociative compounds. Research Development Corporation of Japan, Mitsubishi Metal Corporation, Flynn Thiel Boutell & Tanis, November 3, 1987: US04704257 (14 worldwide citation)

An apparatus for pulling single crystals of dissociative compounds, with a volatile component gas sealed in a growth chamber at a controlled pressure thereof, is disclosed, wherein the chamber is made of one or more materials selected from the group consisting of ceramics, gas-tight carbon, heat-res ...


3
Kenji Tomizawa, Yasushi Shimanuki, Koichi Sassa: Method for growing single crystals of dissociative compounds. Kenji Tomizawa, Yasushi Shimanuki, Research Development Corporation of Japan, Flynn Thiel Boutell & Tanis, May 12, 1987: US04664742 (11 worldwide citation)

The present invention provides a method for growing single crystals of a dissociative compound by pulling with a volatile component gas of the dissociative compound sealed at a controlled pressure in a heated growth chamber in which the single crystals are pulled, wherein a partition pipe having a l ...


4
Shinichi Komori, Yasushi Shimanuki, Isamu Suzuki: High thermal resistance, high electric conductivity copper base alloy. Mitsubishi Kinzoku Kabushiki Kaisha, Frishauf Holtz Goodman & Woodward, August 23, 1983: US04400351 (6 worldwide citation)

An improved copper base alloy having excellent thermal resistance and electric conductivity. The alloy consists essentially of from 0.0005 to 0.01 percent boron, a material selected from the group consisting of phosphorus from 0.001 to 0.01 percent, indium from 0.002 to 0.03 percent, tellurium from ...



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